Tunable nonlinear excitonic optical response in biased bilayer graphene

Fuente: arXiv
Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Quintela, M. F. C. Martins, Peres, N. M. R., Pedersen, T. Garm
Format: Preprint
Veröffentlicht: 2024
Schlagworte:
Online-Zugang:
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
_version_ 1866914929327472640
author Quintela, M. F. C. Martins
Peres, N. M. R.
Pedersen, T. Garm
author_facet Quintela, M. F. C. Martins
Peres, N. M. R.
Pedersen, T. Garm
contents Biased bilayer graphene (BBG) is an important system for studies of excitonic effects in graphene--based systems, with its easily tunable bandgap. This bandgap is governed by an external gate voltage, allowing one to tune the optical response of the system. In this paper, we study the excitonic linear and nonlinear optical response of Bernal stacked BBG as a function of the gate voltage, both for in--plane (IP) and out--of--plane (OOP) directions. Based on a semi-analytical model of the electronic structure of BBG describing the influence of gate voltage on excitonic binding energies, we focus our discussion on both the IP and OOP excitonic response. Both linear and second harmonic generation (SHG) nonlinear responses are shown to be very sensitive to the gate voltage, as both the interband momentum matrix elements and the bandgap of the system will vary greatly with bias potential.
format Preprint
id arxiv_https___arxiv_org_abs_2405_04894
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Tunable nonlinear excitonic optical response in biased bilayer graphene
Quintela, M. F. C. Martins
Peres, N. M. R.
Pedersen, T. Garm
Mesoscale and Nanoscale Physics
Biased bilayer graphene (BBG) is an important system for studies of excitonic effects in graphene--based systems, with its easily tunable bandgap. This bandgap is governed by an external gate voltage, allowing one to tune the optical response of the system. In this paper, we study the excitonic linear and nonlinear optical response of Bernal stacked BBG as a function of the gate voltage, both for in--plane (IP) and out--of--plane (OOP) directions. Based on a semi-analytical model of the electronic structure of BBG describing the influence of gate voltage on excitonic binding energies, we focus our discussion on both the IP and OOP excitonic response. Both linear and second harmonic generation (SHG) nonlinear responses are shown to be very sensitive to the gate voltage, as both the interband momentum matrix elements and the bandgap of the system will vary greatly with bias potential.
title Tunable nonlinear excitonic optical response in biased bilayer graphene
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2405.04894