Development and optimization of large-scale integration of 2D material in memristors
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arXiv
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866910440277147648 |
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| author | Ligaud, Clotilde Van-Jodin, Lucie Le Reig, Bruno Trousset, Pierre Brunet, Paul Bertucchi, Michaël Hellion, Clémence Gauthier, Nicolas Van-Hoan, Le Okuno, Hanako Dosenovic, Djordje Cadot, Stéphane Gassilloud, Remy Jamet, Matthieu |
| author_facet | Ligaud, Clotilde Van-Jodin, Lucie Le Reig, Bruno Trousset, Pierre Brunet, Paul Bertucchi, Michaël Hellion, Clémence Gauthier, Nicolas Van-Hoan, Le Okuno, Hanako Dosenovic, Djordje Cadot, Stéphane Gassilloud, Remy Jamet, Matthieu |
| contents | Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the wafer scale growth of TMDs and their integration into operational devices using clean room compatible processes. In this work, two different CMOS-compatible protocols are developed for the fabrication of MoS$_2$-based memristors, and the resulting performances are compared. The quality of MoS$_2$ at each stage of the process is characterized by Raman spectroscopy and x-ray photoemission spectroscopy. In the first protocol, the structure of MoS$_2$ is preserved during transfer and patterning processes. However, a polymer layer with a minimum thickness of 3 nm remains at the surface of MoS$_2$ limiting the electrical switching performances. In the second protocol, the contamination layer is completely removed resulting in improved electrical switching performances and reproducibility. Based on physico-chemical and electrical results, the switching mechanism is discussed in terms of conduction through grain boundaries. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_05693 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Development and optimization of large-scale integration of 2D material in memristors Ligaud, Clotilde Van-Jodin, Lucie Le Reig, Bruno Trousset, Pierre Brunet, Paul Bertucchi, Michaël Hellion, Clémence Gauthier, Nicolas Van-Hoan, Le Okuno, Hanako Dosenovic, Djordje Cadot, Stéphane Gassilloud, Remy Jamet, Matthieu Applied Physics Materials Science Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are the wafer scale growth of TMDs and their integration into operational devices using clean room compatible processes. In this work, two different CMOS-compatible protocols are developed for the fabrication of MoS$_2$-based memristors, and the resulting performances are compared. The quality of MoS$_2$ at each stage of the process is characterized by Raman spectroscopy and x-ray photoemission spectroscopy. In the first protocol, the structure of MoS$_2$ is preserved during transfer and patterning processes. However, a polymer layer with a minimum thickness of 3 nm remains at the surface of MoS$_2$ limiting the electrical switching performances. In the second protocol, the contamination layer is completely removed resulting in improved electrical switching performances and reproducibility. Based on physico-chemical and electrical results, the switching mechanism is discussed in terms of conduction through grain boundaries. |
| title | Development and optimization of large-scale integration of 2D material in memristors |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2405.05693 |