Simulation of Ge on Si Photodiode with photon-trapping micro-nano holes with -3dB bandwidth of >60 GHz at NIR wavelength
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arXiv
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| Hauptverfasser: | , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866914789899370496 |
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| author | Devine, Ekaterina Ponizovskaya Yamada, Toshishige Wang, Shih-Yuan Islam, M Saif |
| author_facet | Devine, Ekaterina Ponizovskaya Yamada, Toshishige Wang, Shih-Yuan Islam, M Saif |
| contents | The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while the nanostructure at the bottom of the Ge layer helps to increase the optical absorption efficiency to above 80%. The BSI PD allows the PD or PD array wafer to be stacked with an electronic wafer for signal processing and transmission for optical interconnect applications such as short-reach links in data centers. Nano-microhole parameters in randomized composite formation on the bottom layer are optimized with Monte-Carlo molecular dynamics simulations incorporating charge transport to enable wide-spectral, highly efficient, and ultra-fast PDs. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_05972 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Simulation of Ge on Si Photodiode with photon-trapping micro-nano holes with -3dB bandwidth of >60 GHz at NIR wavelength Devine, Ekaterina Ponizovskaya Yamada, Toshishige Wang, Shih-Yuan Islam, M Saif Applied Physics Optics The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while the nanostructure at the bottom of the Ge layer helps to increase the optical absorption efficiency to above 80%. The BSI PD allows the PD or PD array wafer to be stacked with an electronic wafer for signal processing and transmission for optical interconnect applications such as short-reach links in data centers. Nano-microhole parameters in randomized composite formation on the bottom layer are optimized with Monte-Carlo molecular dynamics simulations incorporating charge transport to enable wide-spectral, highly efficient, and ultra-fast PDs. |
| title | Simulation of Ge on Si Photodiode with photon-trapping micro-nano holes with -3dB bandwidth of >60 GHz at NIR wavelength |
| topic | Applied Physics Optics |
| url | https://arxiv.org/abs/2405.05972 |