Terahertz Antenna Impedance Matched to a Graphene Photodetector
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866914096837820416 |
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| author | Joint, François Zhang, Kunyi Poojali, Jayaprakash Lewis, Daniel Pedowitz, Michael Jordan, Brendan Prakash, Gyan Ali, Ashraf Daniels, Kevin Myers-Ward, Rachael L. Murphy, Thomas E. Drew, Howard D. |
| author_facet | Joint, François Zhang, Kunyi Poojali, Jayaprakash Lewis, Daniel Pedowitz, Michael Jordan, Brendan Prakash, Gyan Ali, Ashraf Daniels, Kevin Myers-Ward, Rachael L. Murphy, Thomas E. Drew, Howard D. |
| contents | Developing low-power, high-sensitivity photodetectors for the terahertz (THz) band that operate at room temperature is an important challenge in optoelectronics. In this study, we introduce a photo-thermal-electric (PTE) effect detector based on quasi-free standing bilayer graphene (BLG) on a silicon carbide (SiC) substrate, designed for the THz frequency range. Our detector's performance hinges on a quasi-optical coupling scheme, which integrates an aspherical silicon lens, to optimize impedance matching between the THz antenna and the graphene p-n junction. At room temperature, we achieved a noise equivalent power (NEP) of less than 300 $pW/\sqrt{Hz}$. Through an impedance matching analysis, we coupled a planar antenna with a graphene p-n junction, inserted in parallel to the nano-gap of the antenna, via two coupling capacitors. By adjusting the capacitors and the antenna arm length, we tailored the antenna's maximum infrared power absorption to specific frequencies. The sensitivity, spectral properties, and scalability of our material make it an ideal candidate for future development of far-infrared detectors operating at room temperature. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_06579 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Terahertz Antenna Impedance Matched to a Graphene Photodetector Joint, François Zhang, Kunyi Poojali, Jayaprakash Lewis, Daniel Pedowitz, Michael Jordan, Brendan Prakash, Gyan Ali, Ashraf Daniels, Kevin Myers-Ward, Rachael L. Murphy, Thomas E. Drew, Howard D. Instrumentation and Detectors Developing low-power, high-sensitivity photodetectors for the terahertz (THz) band that operate at room temperature is an important challenge in optoelectronics. In this study, we introduce a photo-thermal-electric (PTE) effect detector based on quasi-free standing bilayer graphene (BLG) on a silicon carbide (SiC) substrate, designed for the THz frequency range. Our detector's performance hinges on a quasi-optical coupling scheme, which integrates an aspherical silicon lens, to optimize impedance matching between the THz antenna and the graphene p-n junction. At room temperature, we achieved a noise equivalent power (NEP) of less than 300 $pW/\sqrt{Hz}$. Through an impedance matching analysis, we coupled a planar antenna with a graphene p-n junction, inserted in parallel to the nano-gap of the antenna, via two coupling capacitors. By adjusting the capacitors and the antenna arm length, we tailored the antenna's maximum infrared power absorption to specific frequencies. The sensitivity, spectral properties, and scalability of our material make it an ideal candidate for future development of far-infrared detectors operating at room temperature. |
| title | Terahertz Antenna Impedance Matched to a Graphene Photodetector |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2405.06579 |