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| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2405.07144 |
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| _version_ | 1866912112592289792 |
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| author | Clear, Chloe Hosseini, Sara AlizadehKhaledi, Amirhossein Brunelle, Nicholas Woolverton, Austin Kanaganayagam, Joshua Kazemi, Moein Chartrand, Camille Keshavarz, Mehdi Xiong, Yihuang Alaerts, Louis Soykal, Oney O. Hautier, Geoffroy Karassiouk, Valentin Thewalt, Mike Higginbottom, Daniel Simmons, Stephanie |
| author_facet | Clear, Chloe Hosseini, Sara AlizadehKhaledi, Amirhossein Brunelle, Nicholas Woolverton, Austin Kanaganayagam, Joshua Kazemi, Moein Chartrand, Camille Keshavarz, Mehdi Xiong, Yihuang Alaerts, Louis Soykal, Oney O. Hautier, Geoffroy Karassiouk, Valentin Thewalt, Mike Higginbottom, Daniel Simmons, Stephanie |
| contents | The silicon T centre's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing and networking. However, key parameters of the T centre's spin-selective optical transitions remain undetermined or ambiguous in literature. In this paper we present a Hamiltonian of the T centre TX state and determine key parameters of the optical transition from T$_0$ to TX$_0$ from a combined analysis of published results, density functional theory, and new spectroscopy. We resolve ambiguous values of the internal defect potential in the literature, and we present the first measurements of electrically tuned T centre emission. As a result, we provide a model of the T centre's optical and spin properties under strain, electric, and magnetic fields that can be utilized for realizing quantum technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_07144 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Optical transition parameters of the silicon T centre Clear, Chloe Hosseini, Sara AlizadehKhaledi, Amirhossein Brunelle, Nicholas Woolverton, Austin Kanaganayagam, Joshua Kazemi, Moein Chartrand, Camille Keshavarz, Mehdi Xiong, Yihuang Alaerts, Louis Soykal, Oney O. Hautier, Geoffroy Karassiouk, Valentin Thewalt, Mike Higginbottom, Daniel Simmons, Stephanie Quantum Physics The silicon T centre's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing and networking. However, key parameters of the T centre's spin-selective optical transitions remain undetermined or ambiguous in literature. In this paper we present a Hamiltonian of the T centre TX state and determine key parameters of the optical transition from T$_0$ to TX$_0$ from a combined analysis of published results, density functional theory, and new spectroscopy. We resolve ambiguous values of the internal defect potential in the literature, and we present the first measurements of electrically tuned T centre emission. As a result, we provide a model of the T centre's optical and spin properties under strain, electric, and magnetic fields that can be utilized for realizing quantum technologies. |
| title | Optical transition parameters of the silicon T centre |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2405.07144 |