Imagen de Portada

Selective incorporation of antimony into gallium nitride

Fuente: arXiv

Guardado en:

Detalles Bibliográficos
Autores principales:	Liu, Yujie, Navid, Ishtiaque Ahmed, Mi, Zetian, Kioupakis, Emmanouil
Formato:	Preprint
Publicado:	2024
Materias:	Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Electronic structure and defect properties of Bi-doped GaN: origins of photoluminescence and optical absorption
por: Liu, Yujie, et al.
Publicado: (2025)

Origin of shallow n-type doping in AlN and Al-rich AlGaN
por: Liu, Yujie, et al.
Publicado: (2025)

Enhancing light emission with electric fields in polar nitride semiconductors
por: Pant, Nick, et al.
Publicado: (2024)

Strain Effects on Auger-Meitner Recombination in Silicon
por: Bushick, Kyle, et al.
Publicado: (2023)

Ab initio thermal conductivity of Ge$_x$Sn$_{1-x}$O$_2$ alloys
por: Zhang, Xiao, et al.
Publicado: (2025)

Electric-Field-Induced Domain Walls in Wurtzite Ferroelectrics
por: Wang, Ding, et al.
Publicado: (2023)

Crystal Orbital Guided Iteration to Atomic Orbitals: A Pathway to Chemically Adaptive Atomic Orbitals from DFT
por: Oliphant, Emily, et al.
Publicado: (2025)

Increased light-emission efficiency in disordered InGaN through the correlated reduction of recombination rates
por: Pant, Nick, et al.
Publicado: (2023)

Origin of the injection-dependent emission blueshift and linewidth broadening of III-nitride light-emitting diodes
por: Pant, Nick, et al.
Publicado: (2022)

Multistability of interstitial magnesium and its carrier recombined migration in gallium nitride
por: Zhao, Yuansheng, et al.
Publicado: (2025)

Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices
por: Pant, Nick, et al.
Publicado: (2022)

Design principles for III-nitride-nanocluster photocatalysts from region-resolved electronic structure
por: Yuan, Shuaishuai, et al.
Publicado: (2026)

Cubic BeB$_2$: A metastable $p$-type conductive material from first principles
por: Zhang, Xiao, et al.
Publicado: (2025)

Controlled epitaxy of room-temperature quantum emitters in gallium nitride
por: Eggleton, Katie M., et al.
Publicado: (2026)

Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
por: Taboada, A. G., et al.
Publicado: (2025)

Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates
por: Wu, Jing, et al.
Publicado: (2022)

Revisiting phonon thermal transport in two-dimensional gallium nitride: higher-order phonon-phonon and phonon-electron scattering
por: Sun, Jianshi, et al.
Publicado: (2024)

Thermodynamic and electronic properties of rutile Sn$_{1-x}$Ge$_x$O$_2$ alloys from first principles
por: Müller, Yann L., et al.
Publicado: (2026)

Electron mobility in AlN from first principles
por: Wang, Amanda, et al.
Publicado: (2025)

Excitation protocols for non-linear phononics in bismuth and antimony
por: Haldar, Anubhab, et al.
Publicado: (2023)

The case of the missing gallium vacancy in gallium arsenide: A multiscale explanation
por: Diaz, Leopoldo, et al.
Publicado: (2025)

Hierarchical multiscale fracture modeling of carbon-nitride nanosheet reinforced composites by combining cohesive phase-field and molecular dynamics
por: Zhang, Qinghua, et al.
Publicado: (2024)

Defect engineering of ultrathin gallium nitride via electric fields for advanced electronic, magnetic, and gas sensing applications
por: Tian, Yujia, et al.
Publicado: (2026)

Physical nature of quasi-stable structures existing in antimony melt
por: Tsygankov, Artem A., et al.
Publicado: (2024)

Rethinking Polarization in Wurtzite Semiconductors
por: Wang, Ding, et al.
Publicado: (2024)

Gallium interstitial contributions to diffusion in gallium arsenide
por: Schick, J. T., et al.
Publicado: (2011)

Morphology-engineered nanostructured silver- and antimony-telluride films for flexible thermoelectric generators
por: Kashyap, Ankit, et al.
Publicado: (2025)

Electron mobility of SnO2 from first principles
por: Wang, Amanda, et al.
Publicado: (2024)

Superconductivity with Tc 116K discovered in antimony polyhydrides
por: Lu, K., et al.
Publicado: (2023)

Quasiperiodic gallium adlayer on i-Al-Pd-Mn
por: Bhakuni, Pramod, et al.
Publicado: (2023)

Efficient First-Principles Framework for Overdamped Phonon Dynamics and Anharmonic Electron-Phonon Coupling in Superionic Materials
por: Wang, Yuxuan, et al.
Publicado: (2025)

Breaking the 800 mV open-circuit voltage barrier in antimony sulfide photovoltaics
por: Zhou, Jiacheng, et al.
Publicado: (2025)

Advances in gallium nitride/two‐dimensional‐material heterojunction‐based photodetectors
por: Jiale Wu, et al.
Publicado: (2025)

Bulk photovoltaic effect in ferroelectric and antiferroelectric phases of antimony sulphoiodide investigated by means of ab-initio simulations
por: Cuono, Giuseppe, et al.
Publicado: (2024)

Correlative and in situ microscopy investigation of phase transformation, crystal growth and degradation of antimony sulfide thin films
por: Wu, Mingjian, et al.
Publicado: (2025)

Atomistic simulations of thermodynamic properties of liquid gallium from first principles
por: Wu, Hongyu, et al.
Publicado: (2023)

Modeling key characteristics of high-efficiency gallium arsenide solar cells
por: Sachenko, A. V., et al.
Publicado: (2026)

Atomic bonding in equilibrium single-component melts. The cases of arsenic, antimony and bismuth
por: Tsygankov, Artem A., et al.
Publicado: (2025)

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
por: Fernández-Garrido, S., et al.
Publicado: (2024)

Phonon screening of excitons in atomically thin semiconductors
por: Lee, Woncheol, et al.
Publicado: (2024)