GHz-rate optical phase shift in light matter interaction-engineered, silicon-ferroelectric nematic liquid crystals
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2024
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866915143826276352 |
|---|---|
| author | Taghavi, Iman Esmaeeli, Omid Chowdhury, Sheri Jahan Awan, Kashif Hammood, Mustafa Mitchell, Matthew Witt, Donald Pecinovsky, Cory Sickler, Jason Young, Jeff Jaeger, Nicolas A. F. Shekhar, Sudip Chrostowski, Lukas |
| author_facet | Taghavi, Iman Esmaeeli, Omid Chowdhury, Sheri Jahan Awan, Kashif Hammood, Mustafa Mitchell, Matthew Witt, Donald Pecinovsky, Cory Sickler, Jason Young, Jeff Jaeger, Nicolas A. F. Shekhar, Sudip Chrostowski, Lukas |
| contents | Organic electro-optic materials have demonstrated promising performance in developing electro-optic phase shifters. Their integration with other silicon photonic processes, nanofabrication complexities, and durability remains to be developed. While the required poling step in electro-optic polymers limits their potential and utilization on a large scale, devices made of paraelectric nematic liquid crystals suffer from slow bandwidth. In ferroelectric nematic liquid crystals, we report an additional GHz-fast phase shift that ultimately allows for significant second-order nonlinear optical coefficients related to the Pockels effect. It avoids poling issues and can pave the way for hybrid silicon-organic systems with CMOS-foundry compatibility. We report DC and AC modulation efficiencies of $\approx$~0.25 V$\cdot$mm (from liquid crystal orientation) and $\approx$~25.7 V$\cdot$mm (from Pockels effect), respectively, an on-chip insertion loss of $\approx$~2.6 dB, and an electro-optic bandwidth of $f_\text{-6dB}$>4.18 GHz, employing improved light-matter interaction in a waveguide architecture that calls for only one lithography step. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_08833 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | GHz-rate optical phase shift in light matter interaction-engineered, silicon-ferroelectric nematic liquid crystals Taghavi, Iman Esmaeeli, Omid Chowdhury, Sheri Jahan Awan, Kashif Hammood, Mustafa Mitchell, Matthew Witt, Donald Pecinovsky, Cory Sickler, Jason Young, Jeff Jaeger, Nicolas A. F. Shekhar, Sudip Chrostowski, Lukas Optics Applied Physics Organic electro-optic materials have demonstrated promising performance in developing electro-optic phase shifters. Their integration with other silicon photonic processes, nanofabrication complexities, and durability remains to be developed. While the required poling step in electro-optic polymers limits their potential and utilization on a large scale, devices made of paraelectric nematic liquid crystals suffer from slow bandwidth. In ferroelectric nematic liquid crystals, we report an additional GHz-fast phase shift that ultimately allows for significant second-order nonlinear optical coefficients related to the Pockels effect. It avoids poling issues and can pave the way for hybrid silicon-organic systems with CMOS-foundry compatibility. We report DC and AC modulation efficiencies of $\approx$~0.25 V$\cdot$mm (from liquid crystal orientation) and $\approx$~25.7 V$\cdot$mm (from Pockels effect), respectively, an on-chip insertion loss of $\approx$~2.6 dB, and an electro-optic bandwidth of $f_\text{-6dB}$>4.18 GHz, employing improved light-matter interaction in a waveguide architecture that calls for only one lithography step. |
| title | GHz-rate optical phase shift in light matter interaction-engineered, silicon-ferroelectric nematic liquid crystals |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2405.08833 |