Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866911877035982848 |
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| author | Liu, Fengdeng Yang, Zhifei Abramovitch, David Guo, Silu Mkhoyan, K. Andre Bernardi, Marco Jalan, Bharat |
| author_facet | Liu, Fengdeng Yang, Zhifei Abramovitch, David Guo, Silu Mkhoyan, K. Andre Bernardi, Marco Jalan, Bharat |
| contents | Exploration and advancements in ultra-wide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. A critical challenge lies in finding a semiconductor that is highly transparent to DUV wavelengths yet conductive with high mobility at room temperature. Here, we achieved both high transparency and high conductivity by employing a thin heterostructure design. The heterostructure facilitated high conductivity by screening phonons using free carriers, while the atomically thin films ensured high transparency. We utilized a heterostructure comprising SrSnO3/La:SrSnO3/GdScO3 (110) and applied electrostatic gating to effectively separate electrons from their dopant atoms. This led to a modulation of carrier density from 1018 cm-3 to 1020 cm-3, with room temperature mobilities ranging from 40 to 140 cm2V-1s-1. The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room-temperature mobility could be further increased with higher electron density. Additionally, the sample exhibited 85% optical transparency at a 300 nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in deep-ultraviolet regime. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_08915 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design Liu, Fengdeng Yang, Zhifei Abramovitch, David Guo, Silu Mkhoyan, K. Andre Bernardi, Marco Jalan, Bharat Materials Science Exploration and advancements in ultra-wide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. A critical challenge lies in finding a semiconductor that is highly transparent to DUV wavelengths yet conductive with high mobility at room temperature. Here, we achieved both high transparency and high conductivity by employing a thin heterostructure design. The heterostructure facilitated high conductivity by screening phonons using free carriers, while the atomically thin films ensured high transparency. We utilized a heterostructure comprising SrSnO3/La:SrSnO3/GdScO3 (110) and applied electrostatic gating to effectively separate electrons from their dopant atoms. This led to a modulation of carrier density from 1018 cm-3 to 1020 cm-3, with room temperature mobilities ranging from 40 to 140 cm2V-1s-1. The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room-temperature mobility could be further increased with higher electron density. Additionally, the sample exhibited 85% optical transparency at a 300 nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in deep-ultraviolet regime. |
| title | Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design |
| topic | Materials Science |
| url | https://arxiv.org/abs/2405.08915 |