Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2405.09345 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866914796802146304 |
|---|---|
| author | Magagnin, Grégoire Bouaziz, Jordan Berre, Martine Le Gonzalez, Sara Deleruyelle, Damien Vilquin, Bertrand |
| author_facet | Magagnin, Grégoire Bouaziz, Jordan Berre, Martine Le Gonzalez, Sara Deleruyelle, Damien Vilquin, Bertrand |
| contents | Over the last fifteen years, ferroelectric and antiferroelectric ultra thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density. Antiferroelectric $ZrO_2$, in particular, holds significant promise for nanosupercapacitors, owing to its potential for high energy storage density (ESD) and high efficiency ($η$). This work assesses the potential of high-performance $Hf_{1-x}Zr_{x}O_2$ thin films encapsulated by TiN electrodes that show linear dielectric (LD), ferroelectric (FE), and antiferroelectric (AFE) behavior. Oxides on silicon are grown by magnetron sputtering and plasma-enhanced atomic layer deposition. ESD and $η$ are compared for FE, AFE, and LD samples at the same electrical field (3.5 MV/cm). As expected, ESD is higher for the FE sample ($95 J/cm^3$), but $η$ is ridiculously small ($\approx$ 55%), because of the opening of the FE hysteresis curve inducing high loss. Conversely, LD samples exhibit the highest efficiency (nearly 100%), at the expense of a lower ESD. AFE $ZrO_2$ thin film strikes a balance between FE and LD behavior, showing reduced losses compared to the FE sample but an ESD as high as $52 J/cm^3$ at 3.5 MV/cm. This value can be further increased up to $84 J/cm^3$ at a higher electrical field (4.0 MV/cm), with an $η$ of 75%, among the highest values reported for fluorite-structured materials, offering promising perspectives for future optimization. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_09345 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Comparative Performance of Fluorite-Structured Materials for Nanosupercapacitor Applications Magagnin, Grégoire Bouaziz, Jordan Berre, Martine Le Gonzalez, Sara Deleruyelle, Damien Vilquin, Bertrand Applied Physics Materials Science Over the last fifteen years, ferroelectric and antiferroelectric ultra thin films based on fluorite-structured materials have drawn significant attention for a wide variety of applications requiring high integration density. Antiferroelectric $ZrO_2$, in particular, holds significant promise for nanosupercapacitors, owing to its potential for high energy storage density (ESD) and high efficiency ($η$). This work assesses the potential of high-performance $Hf_{1-x}Zr_{x}O_2$ thin films encapsulated by TiN electrodes that show linear dielectric (LD), ferroelectric (FE), and antiferroelectric (AFE) behavior. Oxides on silicon are grown by magnetron sputtering and plasma-enhanced atomic layer deposition. ESD and $η$ are compared for FE, AFE, and LD samples at the same electrical field (3.5 MV/cm). As expected, ESD is higher for the FE sample ($95 J/cm^3$), but $η$ is ridiculously small ($\approx$ 55%), because of the opening of the FE hysteresis curve inducing high loss. Conversely, LD samples exhibit the highest efficiency (nearly 100%), at the expense of a lower ESD. AFE $ZrO_2$ thin film strikes a balance between FE and LD behavior, showing reduced losses compared to the FE sample but an ESD as high as $52 J/cm^3$ at 3.5 MV/cm. This value can be further increased up to $84 J/cm^3$ at a higher electrical field (4.0 MV/cm), with an $η$ of 75%, among the highest values reported for fluorite-structured materials, offering promising perspectives for future optimization. |
| title | Comparative Performance of Fluorite-Structured Materials for Nanosupercapacitor Applications |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2405.09345 |