Imagen de Portada

Formation of Beta-Indium Selenide Layers Grown via Selenium Passivation of InP(111)B Substrate

Fuente: arXiv

Guardado en:

Detalles Bibliográficos
Autores principales:	Wickramasinghe, Kaushini S., Forrester, Candice, McCartney, Martha R., Smith, David J., Tamargo, Maria C.
Formato:	Preprint
Publicado:	2024
Materias:	Materials Science Mesoscale and Nanoscale Physics Applied Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Quantum Size Effect in Optically Active Indium Selenide Crystal Phase Heterostructures Grown by Molecular Beam Epitaxy
por: Wojnar, Piotr, et al.
Publicado: (2025)

Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
por: Olšteins, Dāgs, et al.
Publicado: (2024)

Long-Lived Coherent Acoustic Phonons in Epitaxially Grown III-V Adiabatic Cavities
por: Hanif, Muhammad, et al.
Publicado: (2023)

High-field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors
por: Su, Haotian, et al.
Publicado: (2025)

Ion Track Formation via Electric-Field-Enhanced Energy Deposition
por: Ge, Zikang, et al.
Publicado: (2025)

Single Photon Emitters in Ultra-Thin Hexagonal Boron Nitride Layers
por: Liu, Le, et al.
Publicado: (2025)

(111) Si spin qubits constructed on L point of band structure
por: Tokunaga, Takafumi, et al.
Publicado: (2025)

Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer
por: Zhou, Jie, et al.
Publicado: (2024)

Tailoring 4H-SiC Surface Electronic States by Atomic-Layer Deposition for Ideal Peta-Ohm Resistors
por: Xi, Yuying, et al.
Publicado: (2024)

Impact of Disorder Dynamics and Multi-Domain Kinetics on the Sliding Ferroelectricity of CVD-Grown 3R-WSe2 Bilayers
por: Paul, Sourav, et al.
Publicado: (2026)

Formation of a lateral p-n junction light-emitting diode on an n-type high-mobility GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructure
por: Dobney, C. P., et al.
Publicado: (2024)

Effects of Strain Compensation on Electron Mobilities in InAs Quantum Wells Grown on InP(001)
por: Dempsey, C. P., et al.
Publicado: (2024)

Automatic Extraction and Compensation of P-Bit Device Variations in Large Array Utilizing Boltzmann Machine Training
por: Zhang, Bolin, et al.
Publicado: (2024)

Fast readout for large scale spin-based qubits
por: Luo, X., et al.
Publicado: (2026)

Scalable Etch-Free Transfer of Low-Dimensional Materials from Metal Films to Diverse Substrates
por: Yumigeta, Kentaro, et al.
Publicado: (2025)

Formation and temperature stability of the liquid phase in thin-film systems: monograph
por: Dukarov, S. V., et al.
Publicado: (2024)

Beta-AlGaO/Ga2O3 Tri-Gate MOSHEMT with 70GHz fT and 55GHz fmax
por: Nipu, Noor Jahan, et al.
Publicado: (2026)

Humidity Sensing Properties of Different Atomic Layers of Graphene on SiO2/Si Substrate
por: Gao, Qiang, et al.
Publicado: (2024)

All-Electrical Layer-Spintronics in Altermagnetic Bilayer
por: Peng, Rui, et al.
Publicado: (2024)

Ion-Assisted Nanoscale Material Engineering in Atomic Layers
por: Taghinejad, Hossein, et al.
Publicado: (2024)

Layered Topological Antiferromagnetic Metal at Room Temperature -- YbMn$_2$Ge$_2$
por: Jana, Nirmalya, et al.
Publicado: (2025)

Green and Solid State Reduction of GO Monolayers Sandwiched between Arachidic Acid LB Layers
por: Botcha, V. Divakar, et al.
Publicado: (2024)

Reversible Structural Transition of Two-Dimensional Copper Selenide on Cu(111)
por: Zhuang, Yuan, et al.
Publicado: (2021)

k-Selective Electrical-to-Magnon Transduction with Realistic Field-distributed Nanoantennas
por: Höfinger, Andreas, et al.
Publicado: (2025)

Non-volatile Multistate Magnetic Switching via Spin-orbit Torque and Intrinsic Anisotropy
por: Ye, Fei, et al.
Publicado: (2026)

Phase-Field Model of Silicon Carbide Growth During Isothermal Condition
por: Munoz, Elias J., et al.
Publicado: (2023)

Implementing Pseudofractal Designs in Graphene-Based Quantum Hall Arrays using Minkowski-Bouligand Algorithms
por: Scaletta, Dominick S., et al.
Publicado: (2025)

Membrane phononic crystals for high-Qm mechanical defect modes in piezoelectric aluminum nitride
por: Ciers, Anastasiia, et al.
Publicado: (2025)

Acceleration Theorem for Low-Dimensional Electron Systems with Off-Diagonal Effective Mass Components
por: Mori, Nobuya, et al.
Publicado: (2025)

Cubic singularities in binary linear electromechanical oscillators
por: Zhou, Xin, et al.
Publicado: (2023)

Scalable quantum current source on commercial CMOS process technology
por: Dash, Ajit, et al.
Publicado: (2025)

Constructing a Nanopipette-based DNA Electro-Mechanical Device
por: Khan, Cengiz J., et al.
Publicado: (2025)

Hysteresis Measurements as a Diagnostic Tool: A Systematic Approach for Stability Benchmarking and Performance Projection of 2D-Materials-Based MOSFETs
por: Karl, Alexander, et al.
Publicado: (2025)

Dielectrophoresis-Enhanced Graphene Field-Effect Transistors for Nano-Analyte Sensing
por: Izquierdo, Nezhueyotl, et al.
Publicado: (2024)

Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects
por: Rehman, A., et al.
Publicado: (2026)

Selectable diffusion direction with topologically protected edge modes
por: Funayama, Keita, et al.
Publicado: (2023)

Cryogenic Nano-Imaging of Excitons in a Monolayer Semiconductor
por: Roche, Anna, et al.
Publicado: (2025)

Shape Anisotropy Enabled Field Free Switching of Perpendicular Nanomagnets
por: Chouhan, Akanksha, et al.
Publicado: (2025)

Fabrication and characterization of high-Q silicon nitride membrane resonators
por: Hyatt, Atkin D., et al.
Publicado: (2025)

Theory of tensorial magnetic inertia in terahertz spin dynamics
por: Ghosh, Subhadip, et al.
Publicado: (2024)