A Comparison of Electronic, Dielectric, and Thermoelectric Properties of Monolayer of HfX2N4(X = Si, Ge) through First-Principles Calculations

Fuente: arXiv

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Bibliographic Details
Main Authors:	Das, Chayan, Abhishek, Saikia, Dibyajyoti, Gandi, Appala Naidu, Sahu, Satyajit
Format:	Preprint
Published:	2024
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2405.09498