Electrically Injected mid-infrared GeSn laser on Si operating at 140 K
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arXiv
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| Autores principales: | , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866916249486753792 |
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| author | Acharya, Sudip Stanchu, Hryhorii Kumar, Rajesh Ojo, Solomon Benamara, Mourad Chang, Guo-En Li, Baohua Du, Wei Yu, Shui-Qing |
| author_facet | Acharya, Sudip Stanchu, Hryhorii Kumar, Rajesh Ojo, Solomon Benamara, Mourad Chang, Guo-En Li, Baohua Du, Wei Yu, Shui-Qing |
| contents | Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser at room under pulsed condition and at cryogenic temperature under continuous-wave excitation show great promise of GeSn lasers to be efficient electrically injected light sources on Si. Here we report electrically injected GeSn lasers using Fabry-Perot cavity with 20, 40, and 80 micron ridge widths. A maximum operating temperature of 140 K with lasing threshold of 0.756 kA/cm2 at 77 K and emitting wavelength of 2722 nm at 140 K was obtained. The lower threshold current density compared to previous works was achieved by reducing optical loss and improving the optical confinement. The peak power was measured as 2.2 mW/facet at 77 K. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_10163 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electrically Injected mid-infrared GeSn laser on Si operating at 140 K Acharya, Sudip Stanchu, Hryhorii Kumar, Rajesh Ojo, Solomon Benamara, Mourad Chang, Guo-En Li, Baohua Du, Wei Yu, Shui-Qing Optics Applied Physics Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. Demonstrations of optically pumped GeSn laser at room under pulsed condition and at cryogenic temperature under continuous-wave excitation show great promise of GeSn lasers to be efficient electrically injected light sources on Si. Here we report electrically injected GeSn lasers using Fabry-Perot cavity with 20, 40, and 80 micron ridge widths. A maximum operating temperature of 140 K with lasing threshold of 0.756 kA/cm2 at 77 K and emitting wavelength of 2722 nm at 140 K was obtained. The lower threshold current density compared to previous works was achieved by reducing optical loss and improving the optical confinement. The peak power was measured as 2.2 mW/facet at 77 K. |
| title | Electrically Injected mid-infrared GeSn laser on Si operating at 140 K |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2405.10163 |