Cover Image

Electrically Injected mid-infrared GeSn laser on Si operating at 140 K

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Acharya, Sudip, Stanchu, Hryhorii, Kumar, Rajesh, Ojo, Solomon, Benamara, Mourad, Chang, Guo-En, Li, Baohua, Du, Wei, Yu, Shui-Qing
Format:	Preprint
Published:	2024
Subjects:	Optics Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
by: Zhang, Diandian, et al.
Published: (2025)

Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
by: Rudie, Justin, et al.
Published: (2025)

Systematic study of high performance GeSn photodiodes with thick absorber for SWIR and extended SWIR detection
by: Thai, Quang Minh, et al.
Published: (2026)

Grafted AlGaAs/GeSn Optical Pumping Laser Operating up to 130 K
by: Zhou, Jie, et al.
Published: (2024)

Neutralizing Optical Defects in GeSn
by: Eldose, Nirosh M., et al.
Published: (2025)

Magneto-optical characterization of GeSn and GeSn/SiGeSn heterostructures
by: Ashrafganjoie, Mehdi, et al.
Published: (2026)

Germanium-tin (GeSn) avalanche photodiode with up to 2.7 micro cutoff wavelength for extended SWIR detection
by: Thai, Quang Minh, et al.
Published: (2026)

Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
by: Rudie, Justin, et al.
Published: (2025)

High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy
by: Meng‐Hsien Chou, et al.
Published: (2024)

Phase‐Coherent Transport in GeSn Alloys on Si
by: Prateek Kaul, et al.
Published: (2024)

AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
by: Liu, Yang, et al.
Published: (2024)

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
by: Christopher R. Allemang, et al.
Published: (2025)

Exploring the Potential of Microwave Annealing for Enhancing Si‐based GeSn Lasers
by: Yue‐Tong Jheng, et al.
Published: (2026)

Characterization of AlGaAs/GeSn heterojunction band alignment via X-ray photoelectron spectroscopy
by: Liu, Yang, et al.
Published: (2024)

Density Functional Study of Sn Solubility and Atomic Configuration in SiSn and GeSn Alloys
by: Koji Sueoka, et al.
Published: (2026)

Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting
by: Zhou, Jie, et al.
Published: (2025)

Black GeSn on Silicon for Enhanced Short-Wave Infrared Detection and Imaging
by: Huang, Po-Rei, et al.
Published: (2024)

Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
by: Jie Zhou, et al.
Published: (2026)

Black GeSn on Silicon for Enhanced Short‐Wave Infrared Detection and Imaging
by: Po‐Rei Huang, et al.
Published: (2025)

Si‐Based GeSn Lateral p–i–n Waveguide Photodetectors Covering Entire Short‐Wave Infrared Band
by: Cheng‐Ting Kuo, et al.
Published: (2026)

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
by: Gunder, Calbi, et al.
Published: (2023)

Heavy Hole vs. Light Hole Spin Qubits: A Strain-Driven Study of SiGe/Ge and GeSn/Ge
by: Dsouza, Kelvin, et al.
Published: (2024)

GeSn Defects and their Impact on Optoelectronic Properties: A Review
by: Giunto, Andrea, et al.
Published: (2023)

Atomic short-range order control of GeSn as a new degree of freedom for band engineering
by: Liu, Shang, et al.
Published: (2024)

Optical spectroscopy of excitons in ReS2 monolayers grown by chemical vapor deposition
by: Ojo, Solomon, et al.
Published: (2024)

Light-hole states and hyperfine interaction in electrically-defined Ge/GeSn quantum dots
by: Miętkiewicz, Agnieszka, et al.
Published: (2025)

Battery-operated mid-infrared diode laser frequency combs
by: Sterczewski, Lukasz A., et al.
Published: (2021)

Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator
by: Lemieux-Leduc, Cédric, et al.
Published: (2025)

Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon
by: Atalla, Mahmoud R. M., et al.
Published: (2024)

Spontaneous Transition from Conformal to Two-Dimensional Growth in Ge/GeSn Core/Shell Nanowires
by: Assali, Simone, et al.
Published: (2025)

Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
by: Sheibani, Aida, et al.
Published: (2026)

Structural, electronic, and optical properties of hexagonal GeSn from density functional theory
by: Pulcu, Yetkin, et al.
Published: (2026)

Polarization-sensitive GeSn Mid-Infrared Membrane Photodetectors with Integrated Plasmonic Metasurface
by: Cai, Ziqiang, et al.
Published: (2025)

High Pressure and Compositionally Directed Route to a Hexagonal GeSn Alloy Class
by: Serghiou, George, et al.
Published: (2025)

Extremely High Electron Mobility in GeSn Epitaxial Films by Chemical Vapor Deposition
by: Kai‐Ying Tien, et al.
Published: (2025)

First-Principles Calculation of Alloy Scattering and n-type Mobility in Strained GeSn
by: Sewell, Kevin, et al.
Published: (2024)

High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn
by: Kenta Moto, et al.
Published: (2025)

Transfer-printed multiple Ge$_{0.89}$Sn$_{0.11}$ membrane mid-infrared photodetectors
by: Lemieux-Leduc, Cédric, et al.
Published: (2024)

Uncooled GeSn MWIR Photodetectors Using Fully Relaxed Thin Triple‐Step Buffer
by: Suho Park, et al.
Published: (2025)

Mid-Infrared Thermal Radiation Harvesting using Uncooled Narrow Bandgap GeSn Thermophotovoltaic cell
by: Daligou, Gérard, et al.
Published: (2026)