Hyper-doping of Silicon for Plasmonics in the Telecommunication Range
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866916250464026624 |
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| author | Rensberg, Jura Barreda, Angela Wolf, Kevin Undisz, Andreas Salfeld, Jürgen Geburt, Sebastian Staude, Isabelle Ronning, Carsten Hafermann, Martin |
| author_facet | Rensberg, Jura Barreda, Angela Wolf, Kevin Undisz, Andreas Salfeld, Jürgen Geburt, Sebastian Staude, Isabelle Ronning, Carsten Hafermann, Martin |
| contents | We investigate hyper-doping, a promising approach to introduce a high concentration of impurities into silicon beyond its solid solubility limit, for its potential applications in near-infrared plasmonics. We systematically explore the incorporation of dopants into silicon using ion implantation and pulsed laser melting annealing processes. Reflectance spectra analysis shows an achievable plasma wavelength of around 1.5 $μ$m for dopant concentrations exceeding 4 at.%. Complex refractive index data for the doped silicon samples are extracted, revealing their potential for near-infrared plasmonic applications. Moreover, we propose a fabrication process that allows for the creation of hyper-doped silicon nanoparticles without the need for additional masking steps. Our research paves the way for designing CMOS-compatible plasmonic nanostructures operating in the telecommunication wavelength range. The study's findings offer significant insights into the utilization of hyper-doped silicon for advanced photonic and optoelectronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_10900 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Hyper-doping of Silicon for Plasmonics in the Telecommunication Range Rensberg, Jura Barreda, Angela Wolf, Kevin Undisz, Andreas Salfeld, Jürgen Geburt, Sebastian Staude, Isabelle Ronning, Carsten Hafermann, Martin Optics Applied Physics We investigate hyper-doping, a promising approach to introduce a high concentration of impurities into silicon beyond its solid solubility limit, for its potential applications in near-infrared plasmonics. We systematically explore the incorporation of dopants into silicon using ion implantation and pulsed laser melting annealing processes. Reflectance spectra analysis shows an achievable plasma wavelength of around 1.5 $μ$m for dopant concentrations exceeding 4 at.%. Complex refractive index data for the doped silicon samples are extracted, revealing their potential for near-infrared plasmonic applications. Moreover, we propose a fabrication process that allows for the creation of hyper-doped silicon nanoparticles without the need for additional masking steps. Our research paves the way for designing CMOS-compatible plasmonic nanostructures operating in the telecommunication wavelength range. The study's findings offer significant insights into the utilization of hyper-doped silicon for advanced photonic and optoelectronic applications. |
| title | Hyper-doping of Silicon for Plasmonics in the Telecommunication Range |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2405.10900 |