Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO$_{2}$-based devices
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arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866913354490052608 |
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| author | Ferreyra, C. Badillo, M. Sánchez, M. J. Acuautla, M. Noheda, B. Rubi, D. |
| author_facet | Ferreyra, C. Badillo, M. Sánchez, M. J. Acuautla, M. Noheda, B. Rubi, D. |
| contents | Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers -- present at ferroelectric/metal interfaces -- that control the device resistance. Here, we unveil the coexistence of multiple memristive mechanisms in Pt/Ca:HfO$_2$/Pt devices fabricated on silicon by a simple and effective low-toxicity chemical solution method. Depending on the fabrication conditions, either dielectric or ferroelectric devices are obtained, each one presenting a distinct memristive response. The devices are forming-free and can sustain ferroelectric switching and memristive behavior simultaneously. Aided by numerical simulations, we describe this behavior as a competition of different mechanisms, including the effect of the ferroelectric polarization on Schottky interfaces and oxygen vacancy electromigration. Finally, we propose a simple learning algorithm for time-series recognition, designed to take advantage of the resistance relaxations present in the case of the ferroelectric devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_10909 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO$_{2}$-based devices Ferreyra, C. Badillo, M. Sánchez, M. J. Acuautla, M. Noheda, B. Rubi, D. Applied Physics Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers -- present at ferroelectric/metal interfaces -- that control the device resistance. Here, we unveil the coexistence of multiple memristive mechanisms in Pt/Ca:HfO$_2$/Pt devices fabricated on silicon by a simple and effective low-toxicity chemical solution method. Depending on the fabrication conditions, either dielectric or ferroelectric devices are obtained, each one presenting a distinct memristive response. The devices are forming-free and can sustain ferroelectric switching and memristive behavior simultaneously. Aided by numerical simulations, we describe this behavior as a competition of different mechanisms, including the effect of the ferroelectric polarization on Schottky interfaces and oxygen vacancy electromigration. Finally, we propose a simple learning algorithm for time-series recognition, designed to take advantage of the resistance relaxations present in the case of the ferroelectric devices. |
| title | Memristive response and neuromorphic functionality of polycrystalline ferroelectric Ca:HfO$_{2}$-based devices |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2405.10909 |