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Main Authors: Erickson, Adam, Shah, Syed Qamar Abbas, Mahmood, Ather, Buragohain, Pratyush, Fescenko, Ilja, Gruverman, Alexei, Binek, Christian, Laraoui, Abdelghani
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2405.11122
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author Erickson, Adam
Shah, Syed Qamar Abbas
Mahmood, Ather
Buragohain, Pratyush
Fescenko, Ilja
Gruverman, Alexei
Binek, Christian
Laraoui, Abdelghani
author_facet Erickson, Adam
Shah, Syed Qamar Abbas
Mahmood, Ather
Buragohain, Pratyush
Fescenko, Ilja
Gruverman, Alexei
Binek, Christian
Laraoui, Abdelghani
contents Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperature (TN ~307 K) and the need of a symmetry breaking applied magnetic field to achieve reversal of the Neel vector. Recently, boron (B) doping of Cr2O3 films led to an increase TN > 400 K and allowed the realization of voltage magnetic-field free controlled Néel vector rotation. Here, we directly image the impact of B doping on the formation of AFM domains in Cr2O3 thin films and elucidate the mechanism of voltage-controlled manipulation of the spin structure using nitrogen vacancy (NV) scanning probe magnetometry. We find a stark reduction and thickness dependence of domain size in B-doped Cr2O3 (B:Cr2O3) films, explained by the increased germ density, likely associated with the B doping. By reconstructing the surface magnetization from the NV stray-field maps, we find a qualitative distinction between the undoped and B-doped Cr2O3 films, manifested by the histogram distribution of the AFM ordering, i.e., 180 degree domains for pure films, and 90 degree domains for B:Cr2O3 films. Additionally, NV imaging of voltage-controlled B-doped Cr2O3 devices corroborate the 90 degeree rotation of the AFM domains observed in magnetotransport measurement.
format Preprint
id arxiv_https___arxiv_org_abs_2405_11122
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Imaging Local Effects of Voltage and Boron Doping on Spin Reversal in Antiferromagnetic Magnetoelectric Cr2O3 Thin Films and Devices
Erickson, Adam
Shah, Syed Qamar Abbas
Mahmood, Ather
Buragohain, Pratyush
Fescenko, Ilja
Gruverman, Alexei
Binek, Christian
Laraoui, Abdelghani
Materials Science
Mesoscale and Nanoscale Physics
Chromia (Cr2O3) is a magnetoelectric oxide which permits voltage-control of the antiferromagnetic (AFM) order, but it suffers technological constraints due to its low Neel Temperature (TN ~307 K) and the need of a symmetry breaking applied magnetic field to achieve reversal of the Neel vector. Recently, boron (B) doping of Cr2O3 films led to an increase TN > 400 K and allowed the realization of voltage magnetic-field free controlled Néel vector rotation. Here, we directly image the impact of B doping on the formation of AFM domains in Cr2O3 thin films and elucidate the mechanism of voltage-controlled manipulation of the spin structure using nitrogen vacancy (NV) scanning probe magnetometry. We find a stark reduction and thickness dependence of domain size in B-doped Cr2O3 (B:Cr2O3) films, explained by the increased germ density, likely associated with the B doping. By reconstructing the surface magnetization from the NV stray-field maps, we find a qualitative distinction between the undoped and B-doped Cr2O3 films, manifested by the histogram distribution of the AFM ordering, i.e., 180 degree domains for pure films, and 90 degree domains for B:Cr2O3 films. Additionally, NV imaging of voltage-controlled B-doped Cr2O3 devices corroborate the 90 degeree rotation of the AFM domains observed in magnetotransport measurement.
title Imaging Local Effects of Voltage and Boron Doping on Spin Reversal in Antiferromagnetic Magnetoelectric Cr2O3 Thin Films and Devices
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2405.11122