Image de couverture de livre

Direct evidence for carbon incorporation on the nitrogen site in AlN

Fuente: arXiv

Enregistré dans:

Détails bibliographiques
Auteurs principaux:	Wickramaratne, Darshana, Siford, Mackenzie, Mollik, Md Shafiqul Islam, Lyons, John L., Zvanut, M. E.
Format:	Preprint
Publié:	2024
Sujets:	Materials Science
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

Documents similaires

Nonradiative quenching of EPR signals in germanium-doped AlGaN: evidence for DX-center formation
par: Forbus, Jason, et autres
Publié: (2024)

Assessing the SCAN functional for deep defects and small polarons in wide-bandgap semiconductors and insulators
par: Wickramaratne, Darshana, et autres
Publié: (2023)

Self-compensation by silicon $DX$ centers in ultrawide-bandgap nitrides
par: Lyons, John L., et autres
Publié: (2026)

The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides
par: Khalid, Shoaib, et autres
Publié: (2023)

Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
par: Singhal, Jashan, et autres
Publié: (2022)

Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate
par: Hamid, Md Abdul, et autres
Publié: (2026)

Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
par: Kim, Minho, et autres
Publié: (2025)

Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface
par: Lu, Yi, et autres
Publié: (2026)

Ferroelectric Fractals: Switching Mechanism of Wurtzite AlN
par: Behrendt, Drew, et autres
Publié: (2024)

Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
par: Chen, Yu-Hsin, et autres
Publié: (2025)

AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators
par: Buatip, N., et autres
Publié: (2024)

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
par: Fernández-Garrido, S., et autres
Publié: (2024)

Effects of altermagnetic order, strain and doping in RuO$_2$
par: Wickramaratne, Darshana, et autres
Publié: (2025)

Origin of shallow n-type doping in AlN and Al-rich AlGaN
par: Liu, Yujie, et autres
Publié: (2025)

Electron mobility in AlN from first principles
par: Wang, Amanda, et autres
Publié: (2025)

Strain effects on $n$-type doping in AlN
par: Wang, Haochen, et autres
Publié: (2026)

Strain distribution in GaN/AlN superlattices grown on AlN/sapphire templates: comparison of X-ray diffraction and photoluminescence studies
par: Wierzbicka, Aleksandra, et autres
Publié: (2025)

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
par: Jmerik, V. N., et autres
Publié: (2026)

Significant impact of Al1-xGaxN interlayer on GaN/AlN thermal boundary conductance
par: Adnan, Khalid Zobaid, et autres
Publié: (2026)

First-principles band alignment engineering in polar and nonpolar orientations for wurtzite AlN, GaN, and B$_x$Al$_{1-x}$N alloys
par: Milne, Cody L, et autres
Publié: (2025)

XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
par: Kim, Eungkyun, et autres
Publié: (2025)

Machine-learning interatomic potential for AlN for epitaxial simulation
par: Taormina, Nicholas, et autres
Publié: (2025)

Metalorganic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures
par: Vangipuram, Vijay Gopal Thirupakuzi, et autres
Publié: (2025)

Wurtzite AlScN/AlN Superlattice Ferroelectrics Enable Endurance Beyond 1010 Cycles
par: Wang, Ruiqing, et autres
Publié: (2025)

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
par: John, Philipp, et autres
Publié: (2023)

Machine-learning potential for phonon transport in AlN with defects in multiple charge states
par: Dou, Ying, et autres
Publié: (2024)

Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE
par: Pampili, Pietro, et autres
Publié: (2024)

Development of TiN/AlN-based superconducting qubit components
par: Schoof, Benedikt, et autres
Publié: (2024)

Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices
par: Pant, Nick, et autres
Publié: (2022)

Auger parameter analysis for TiN and AlN thin films via combined in-situ XPS and HAXPES
par: Pshyk, O. V., et autres
Publié: (2025)

Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios
par: Yang, Xu, et autres
Publié: (2026)

Beyond structural stabilization of highly-textured AlN thin film: the role of chemical effects
par: Pshyk, O. V., et autres
Publié: (2024)

Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
par: Huang, H-W S., et autres
Publié: (2025)

Si/AlN p-n heterojunction interfaced with ultrathin SiO2
par: Abbasi, Haris Naeem, et autres
Publié: (2024)

Thermal transport in GaN/AlN HEMTs on 4H-SiC: Role of layer thickness and hetero-interfaces
par: Tran, Dat Q., et autres
Publié: (2025)

Intersubband optical absorption in the GaN/AlN qunatum wire with donor-doping
par: Ortakaya, Sami
Publié: (2025)

High Thermal Conductivity in Back-End-of-Line Compatible AlN Thin Films
par: Guo, Xufei, et autres
Publié: (2026)

Alkali doping of Zn$_{\rm x}$Mg$_{\rm 1-x}$O alloys for $p$-type conductivity
par: Lyons, John L.
Publié: (2025)

In-vacuum surface flashover of SiN, AlN, and etched SiO2 thin films at micrometre scales
par: Kumar, Vijay, et autres
Publié: (2025)

DataScribe: An AI-Native, Policy-Aligned Web Platform for Multi-Objective Materials Design and Discovery
par: Singh, Divyanshu, et autres
Publié: (2026)