Vibrational modes as the origin of dielectric loss at 0.27$\unicode{x2013}$100 THz in a-SiC:H
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866908367821209600 |
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| author | Buijtendorp, B. T. Endo, A. Jellema, W. Karatsu, K. Kouwenhoven, K. Lamers, D. van der Linden, A. J. Rostem, K. Veen, M. Wollack, E. J. Baselmans, J. J. A. Vollebregt, S. |
| author_facet | Buijtendorp, B. T. Endo, A. Jellema, W. Karatsu, K. Kouwenhoven, K. Lamers, D. van der Linden, A. J. Rostem, K. Veen, M. Wollack, E. J. Baselmans, J. J. A. Vollebregt, S. |
| contents | Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\mathrm{\sim}$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band ($\mathrm{\sim}$0.1$\unicode{x2013}$1 THz) is not understood. We measured the loss of hydrogenated amorphous SiC (a-SiC:H) films in the 0.27$\unicode{x2013}$100 THz range using superconducting microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in the a-SiC:H above 200 GHz. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2405_13688 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Vibrational modes as the origin of dielectric loss at 0.27$\unicode{x2013}$100 THz in a-SiC:H Buijtendorp, B. T. Endo, A. Jellema, W. Karatsu, K. Kouwenhoven, K. Lamers, D. van der Linden, A. J. Rostem, K. Veen, M. Wollack, E. J. Baselmans, J. J. A. Vollebregt, S. Instrumentation and Methods for Astrophysics Materials Science Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\mathrm{\sim}$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band ($\mathrm{\sim}$0.1$\unicode{x2013}$1 THz) is not understood. We measured the loss of hydrogenated amorphous SiC (a-SiC:H) films in the 0.27$\unicode{x2013}$100 THz range using superconducting microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in the a-SiC:H above 200 GHz. |
| title | Vibrational modes as the origin of dielectric loss at 0.27$\unicode{x2013}$100 THz in a-SiC:H |
| topic | Instrumentation and Methods for Astrophysics Materials Science |
| url | https://arxiv.org/abs/2405.13688 |