Interfacially enhanced superconductivity in Fe(Te,Se)/Bi4Te3 heterostructures
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arXiv
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| Autori principali: | , , , , , , , , , , , , , , , |
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| Natura: | Preprint |
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2024
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| author | Chen, An-Hsi Lu, Qiangsheng Hershkovitz, Eitan Crespillo, Miguel L. Mazza, Alessandro R. Smith, Tyler Ward, T. Zac Eres, Gyula Gandhi, Shornam Mahfuz, Meer Muhtasim Starchenko, Vitalii Hattar, Khalid Lee, Joon Sue Kim, Honggyu Moore, Robert G. Brahlek, Matthew |
| author_facet | Chen, An-Hsi Lu, Qiangsheng Hershkovitz, Eitan Crespillo, Miguel L. Mazza, Alessandro R. Smith, Tyler Ward, T. Zac Eres, Gyula Gandhi, Shornam Mahfuz, Meer Muhtasim Starchenko, Vitalii Hattar, Khalid Lee, Joon Sue Kim, Honggyu Moore, Robert G. Brahlek, Matthew |
| contents | Realizing topological superconductivity by integrating high-transition-temperature ($T_C$) superconductors with topological insulators can open new paths for quantum computing applications. Here, we report a new approach for increasing the superconducting transition temperature ($T_{C}^{onset}$) by interfacing the unconventional superconductor Fe(Te,Se) with the topological insulator Bi-Te system in the low-Se doping regime, near where superconductivity vanishes in the bulk. The critical finding is that the $T_{C}^{onset}$ of Fe(Te,Se) increases from nominally non-superconducting to as high as 12.5 K when $Bi_2Te_3$ is replaced with the topological phase $Bi_4Te_3$. Interfacing Fe(Te,Se) with $Bi_4Te_3$ is also found to be critical for stabilizing superconductivity in monolayer films where $T_{C}^{onset}$ can be as high as 6 K. Measurements of the electronic and crystalline structure of the $Bi_4Te_3$ layer reveal that a large electron transfer, epitaxial strain, and novel chemical reduction processes are critical factors for the enhancement of superconductivity. This novel route for enhancing $T_C$ in an important epitaxial system provides new insight on the nature of interfacial superconductivity and a platform to identify and utilize new electronic phases. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_15654 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Interfacially enhanced superconductivity in Fe(Te,Se)/Bi4Te3 heterostructures Chen, An-Hsi Lu, Qiangsheng Hershkovitz, Eitan Crespillo, Miguel L. Mazza, Alessandro R. Smith, Tyler Ward, T. Zac Eres, Gyula Gandhi, Shornam Mahfuz, Meer Muhtasim Starchenko, Vitalii Hattar, Khalid Lee, Joon Sue Kim, Honggyu Moore, Robert G. Brahlek, Matthew Superconductivity Materials Science Realizing topological superconductivity by integrating high-transition-temperature ($T_C$) superconductors with topological insulators can open new paths for quantum computing applications. Here, we report a new approach for increasing the superconducting transition temperature ($T_{C}^{onset}$) by interfacing the unconventional superconductor Fe(Te,Se) with the topological insulator Bi-Te system in the low-Se doping regime, near where superconductivity vanishes in the bulk. The critical finding is that the $T_{C}^{onset}$ of Fe(Te,Se) increases from nominally non-superconducting to as high as 12.5 K when $Bi_2Te_3$ is replaced with the topological phase $Bi_4Te_3$. Interfacing Fe(Te,Se) with $Bi_4Te_3$ is also found to be critical for stabilizing superconductivity in monolayer films where $T_{C}^{onset}$ can be as high as 6 K. Measurements of the electronic and crystalline structure of the $Bi_4Te_3$ layer reveal that a large electron transfer, epitaxial strain, and novel chemical reduction processes are critical factors for the enhancement of superconductivity. This novel route for enhancing $T_C$ in an important epitaxial system provides new insight on the nature of interfacial superconductivity and a platform to identify and utilize new electronic phases. |
| title | Interfacially enhanced superconductivity in Fe(Te,Se)/Bi4Te3 heterostructures |
| topic | Superconductivity Materials Science |
| url | https://arxiv.org/abs/2405.15654 |