Intrinsic localized excitons in MoSe$_2$/CrSBr heterostructures
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arXiv
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| Autores principales: | , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866909210410745856 |
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| author | Huang, Xinyue Song, Zhigang Gao, Yuchen Gu, Pingfan Watanabe, Kenji Taniguchi, Takashi Yang, Shiqi Chen, Zuxin Ye, Yu |
| author_facet | Huang, Xinyue Song, Zhigang Gao, Yuchen Gu, Pingfan Watanabe, Kenji Taniguchi, Takashi Yang, Shiqi Chen, Zuxin Ye, Yu |
| contents | We present a comprehensive investigation of optical properties in MoSe$_2$/CrSBr heterostructures, unveiling the presence of localized excitons represented by a new emission feature, X$^*$. We demonstrate through temperature- and power-dependent photoluminescence spectroscopy that X$^*$ originates from excitons confined by intrinsic defects within the CrSBr layer. The valley polarization of X$^*$ and trion peaks displays opposite polarity under a magnetic field, which closely correlates with the magnetic order of CrSBr. This is attributed to spin-dependent charge transfer mechanisms across the heterointerface, supported by density functional theory calculations revealing a type-II band alignment and spin-polarized band structures. Furthermore, the strong in-plane anisotropy of CrSBr induces unique polarization-dependent responses in MoSe$_2$ emissions. Our study highlights the crucial role of defects in shaping excitonic properties. It offers valuable insights into spectral-resolved proximity effects in van der Waals heterostructures between semiconductor and magnet, contributing to advancing spintronic and valleytronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_16079 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Intrinsic localized excitons in MoSe$_2$/CrSBr heterostructures Huang, Xinyue Song, Zhigang Gao, Yuchen Gu, Pingfan Watanabe, Kenji Taniguchi, Takashi Yang, Shiqi Chen, Zuxin Ye, Yu Mesoscale and Nanoscale Physics We present a comprehensive investigation of optical properties in MoSe$_2$/CrSBr heterostructures, unveiling the presence of localized excitons represented by a new emission feature, X$^*$. We demonstrate through temperature- and power-dependent photoluminescence spectroscopy that X$^*$ originates from excitons confined by intrinsic defects within the CrSBr layer. The valley polarization of X$^*$ and trion peaks displays opposite polarity under a magnetic field, which closely correlates with the magnetic order of CrSBr. This is attributed to spin-dependent charge transfer mechanisms across the heterointerface, supported by density functional theory calculations revealing a type-II band alignment and spin-polarized band structures. Furthermore, the strong in-plane anisotropy of CrSBr induces unique polarization-dependent responses in MoSe$_2$ emissions. Our study highlights the crucial role of defects in shaping excitonic properties. It offers valuable insights into spectral-resolved proximity effects in van der Waals heterostructures between semiconductor and magnet, contributing to advancing spintronic and valleytronic devices. |
| title | Intrinsic localized excitons in MoSe$_2$/CrSBr heterostructures |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2405.16079 |