Analytical photoresponses of Schottky contact MoS2 phototransistors
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arXiv
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866909210466320384 |
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| author | Wei, Jianyong Liu, Yumeng Wang, Yizhuo Li, Kai Lian, Zhentao Xie, Maosong Yang, Xinhan Khaleghi, Seyed Saleh Mousavi Dai, Fuxing Hu, Weida Gao, Xuejiao Yang, Rui Dan, Yaping |
| author_facet | Wei, Jianyong Liu, Yumeng Wang, Yizhuo Li, Kai Lian, Zhentao Xie, Maosong Yang, Xinhan Khaleghi, Seyed Saleh Mousavi Dai, Fuxing Hu, Weida Gao, Xuejiao Yang, Rui Dan, Yaping |
| contents | High-gain photodetectors based on two-dimensional (2D) semiconductors, in particular those in photoconductive mode, have been extensively investigated in the past decade. However, the classical photoconductive theory was derived on two misplaced assumptions. In this work, we established an explicit analytical device model for Schottky contact MoS2 phototransistors that fits well with experimental data. From the fitting results, we found that the Richardson constant of the MoS2 Schottky contact is temperature dependent, indicating that the Schottky contacts for the 2D material is best described by the mixed thermionic emission and diffusion model. Based on this device model, we further established an analytical photoresponse for the few-layer MoS2 phototransistors, from which we found the voltage distribution on the two Schottky contacts and the channel, and extracted the minority carrier recombination lifetimes. The lifetimes are comparable with the values found from transient photoluminescence measurements, which therefore validates our analytical photoresponses for Schottky contact 2D semiconducting phototransistors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_16209 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Analytical photoresponses of Schottky contact MoS2 phototransistors Wei, Jianyong Liu, Yumeng Wang, Yizhuo Li, Kai Lian, Zhentao Xie, Maosong Yang, Xinhan Khaleghi, Seyed Saleh Mousavi Dai, Fuxing Hu, Weida Gao, Xuejiao Yang, Rui Dan, Yaping Mesoscale and Nanoscale Physics Materials Science High-gain photodetectors based on two-dimensional (2D) semiconductors, in particular those in photoconductive mode, have been extensively investigated in the past decade. However, the classical photoconductive theory was derived on two misplaced assumptions. In this work, we established an explicit analytical device model for Schottky contact MoS2 phototransistors that fits well with experimental data. From the fitting results, we found that the Richardson constant of the MoS2 Schottky contact is temperature dependent, indicating that the Schottky contacts for the 2D material is best described by the mixed thermionic emission and diffusion model. Based on this device model, we further established an analytical photoresponse for the few-layer MoS2 phototransistors, from which we found the voltage distribution on the two Schottky contacts and the channel, and extracted the minority carrier recombination lifetimes. The lifetimes are comparable with the values found from transient photoluminescence measurements, which therefore validates our analytical photoresponses for Schottky contact 2D semiconducting phototransistors. |
| title | Analytical photoresponses of Schottky contact MoS2 phototransistors |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2405.16209 |