Extended spin relaxation times of optically addressed telecom defects in silicon carbide

Fuente: arXiv

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Bibliographic Details
Main Authors:	Ahn, Jonghoon, Wicker, Christina, Bitner, Nolan, Solomon, Michael T., Tissot, Benedikt, Burkard, Guido, Dibos, Alan M., Zhang, Jiefei, Heremans, F. Joseph, Awschalom, David D.
Format:	Preprint
Published:	2024
Subjects:	Quantum Physics Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2405.16303