Double-layer Thin-film LiNbO3 Longitudinally Excited Shear Wave Resonators with Ultra-large Electromechanical Coupling Coefficient and Spurious-Free Performance

Fuente: arXiv
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Autores principales: Qin, Zhen-Hui, Wu, Shu-Mao, Hao, Chen-Bei, Chen, Hua-Yang, Liang, Sheng-Nan, Yu, Si-Yuan, Chen, Yan-Feng
Formato: Preprint
Publicado: 2024
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author Qin, Zhen-Hui
Wu, Shu-Mao
Hao, Chen-Bei
Chen, Hua-Yang
Liang, Sheng-Nan
Yu, Si-Yuan
Chen, Yan-Feng
author_facet Qin, Zhen-Hui
Wu, Shu-Mao
Hao, Chen-Bei
Chen, Hua-Yang
Liang, Sheng-Nan
Yu, Si-Yuan
Chen, Yan-Feng
contents This work proposes a double-layer thin-film lithium niobate (LiNbO3) longitudinally excited shear wave resonator with a theoretical electromechanical coupling coefficient exceeding 60%, RaR close to 28%, and no spurious modes. This ultra-large electromechanical coupling coefficient, which is close to the upper limit of LiNbO3, is much larger than all microwave acoustic resonators reported so far. Based on X-cut thin-film LiNbO3, when the film thickness is in the order of hundreds of nanometers, the frequency of the fundamental mode of the resonator can cover 1GHz to10GHz. The resonator design is convenient and flexible. The resonant frequency can be modulated monotonically by changing either the electrode or the thickness of the thin-film LiNbO3 without introducing additional spurious modes. This ideal resonator architecture is also applicable to LiTaO3. With the development of the new generation of mobile communications, this resonator is expected to become a key solution for future high-performance, ultra-wide-bandwidth acoustic filters.
format Preprint
id arxiv_https___arxiv_org_abs_2405_17168
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Double-layer Thin-film LiNbO3 Longitudinally Excited Shear Wave Resonators with Ultra-large Electromechanical Coupling Coefficient and Spurious-Free Performance
Qin, Zhen-Hui
Wu, Shu-Mao
Hao, Chen-Bei
Chen, Hua-Yang
Liang, Sheng-Nan
Yu, Si-Yuan
Chen, Yan-Feng
Applied Physics
This work proposes a double-layer thin-film lithium niobate (LiNbO3) longitudinally excited shear wave resonator with a theoretical electromechanical coupling coefficient exceeding 60%, RaR close to 28%, and no spurious modes. This ultra-large electromechanical coupling coefficient, which is close to the upper limit of LiNbO3, is much larger than all microwave acoustic resonators reported so far. Based on X-cut thin-film LiNbO3, when the film thickness is in the order of hundreds of nanometers, the frequency of the fundamental mode of the resonator can cover 1GHz to10GHz. The resonator design is convenient and flexible. The resonant frequency can be modulated monotonically by changing either the electrode or the thickness of the thin-film LiNbO3 without introducing additional spurious modes. This ideal resonator architecture is also applicable to LiTaO3. With the development of the new generation of mobile communications, this resonator is expected to become a key solution for future high-performance, ultra-wide-bandwidth acoustic filters.
title Double-layer Thin-film LiNbO3 Longitudinally Excited Shear Wave Resonators with Ultra-large Electromechanical Coupling Coefficient and Spurious-Free Performance
topic Applied Physics
url https://arxiv.org/abs/2405.17168