Atomically sharp 1D interfaces in 2D lateral heterostructures of VSe$_2$-NbSe$_2$ monolayers
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arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| author | Huang, Xin González-Herrero, Héctor Silveira, Orlando J. Kezilebieke, Shawulienu Liljeroth, Peter Sainio, Jani |
| author_facet | Huang, Xin González-Herrero, Héctor Silveira, Orlando J. Kezilebieke, Shawulienu Liljeroth, Peter Sainio, Jani |
| contents | Van der Waals heterostructures have emerged as an ideal platform for creating engineered artificial electronic states. While vertical heterostructures have been extensively studied, realizing high-quality lateral heterostructures with atomically sharp interfaces remains a major experimental challenge. Here, we advance a one-pot two-step molecular beam lateral epitaxy approach and successfully synthesize atomically well-defined 1T-VSe$_2$ -- 1H-NbSe$_2$ lateral heterostructures. We demonstrate the formation of defect-free lateral heterostructures and characterize their electronic structure using scanning tunnelling microscopy and spectroscopy together with density functional theory calculations. We find additional electronic states at the one-dimensional interface as well as signatures of Kondo resonances in a side-coupled geometry. Our experiments explore the full potential of lateral heterostructures for realizing exotic electronic states in low-dimensional systems for further studies of artificial designer quantum materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_17231 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Atomically sharp 1D interfaces in 2D lateral heterostructures of VSe$_2$-NbSe$_2$ monolayers Huang, Xin González-Herrero, Héctor Silveira, Orlando J. Kezilebieke, Shawulienu Liljeroth, Peter Sainio, Jani Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons Van der Waals heterostructures have emerged as an ideal platform for creating engineered artificial electronic states. While vertical heterostructures have been extensively studied, realizing high-quality lateral heterostructures with atomically sharp interfaces remains a major experimental challenge. Here, we advance a one-pot two-step molecular beam lateral epitaxy approach and successfully synthesize atomically well-defined 1T-VSe$_2$ -- 1H-NbSe$_2$ lateral heterostructures. We demonstrate the formation of defect-free lateral heterostructures and characterize their electronic structure using scanning tunnelling microscopy and spectroscopy together with density functional theory calculations. We find additional electronic states at the one-dimensional interface as well as signatures of Kondo resonances in a side-coupled geometry. Our experiments explore the full potential of lateral heterostructures for realizing exotic electronic states in low-dimensional systems for further studies of artificial designer quantum materials. |
| title | Atomically sharp 1D interfaces in 2D lateral heterostructures of VSe$_2$-NbSe$_2$ monolayers |
| topic | Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2405.17231 |