Tunable magnetism in Nitride MXenes:consequences of atomic layer stacking

Fuente: arXiv
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Main Authors: Sarmah, Himangshu Sekhar, Ghosh, Subhradip
Format: Preprint
Published: 2024
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author Sarmah, Himangshu Sekhar
Ghosh, Subhradip
author_facet Sarmah, Himangshu Sekhar
Ghosh, Subhradip
contents We have performed Density Functional Theory (DFT) based calculations to investigate the effects of stacking patterns on the electronic and magnetic properties of several Nitride MXenes. MXenes, a relatively new addition to the family of two-dimensional materials, have exhibited fascinating properties on several occasions, primarily due to their compositional flexibility. However, compared to Carbide MXenes, Nitride MXenes are much less explored. Moreover, the structural aspects of MXenes and the tunability it may offer have not been explored until recently. In this work, we have combined these two less-explored aspects to examine the structure-property relations in the field of magnetism. We find that in the family of M$_{2}$NT$_{2}$ (M=Sc, Ti, V, Cr, Mn; T=O, F) MXenes, the stacking of transition metal planes has a substantial effect on the ground state and finite temperature magnetic properties. We also find that the electronic ground states can be tuned by changing the stacking pattern in these compounds, making the materials appropriate for applications as magnetic devices. Through a detailed analysis, we have connected the unconventional stacking pattern-driven tunability of these compounds with regard to electronic and magnetic properties to the local symmetry, inhomogeneity (or lack of it) of structural parameters, and electronic structures.
format Preprint
id arxiv_https___arxiv_org_abs_2405_17321
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Tunable magnetism in Nitride MXenes:consequences of atomic layer stacking
Sarmah, Himangshu Sekhar
Ghosh, Subhradip
Materials Science
Mesoscale and Nanoscale Physics
We have performed Density Functional Theory (DFT) based calculations to investigate the effects of stacking patterns on the electronic and magnetic properties of several Nitride MXenes. MXenes, a relatively new addition to the family of two-dimensional materials, have exhibited fascinating properties on several occasions, primarily due to their compositional flexibility. However, compared to Carbide MXenes, Nitride MXenes are much less explored. Moreover, the structural aspects of MXenes and the tunability it may offer have not been explored until recently. In this work, we have combined these two less-explored aspects to examine the structure-property relations in the field of magnetism. We find that in the family of M$_{2}$NT$_{2}$ (M=Sc, Ti, V, Cr, Mn; T=O, F) MXenes, the stacking of transition metal planes has a substantial effect on the ground state and finite temperature magnetic properties. We also find that the electronic ground states can be tuned by changing the stacking pattern in these compounds, making the materials appropriate for applications as magnetic devices. Through a detailed analysis, we have connected the unconventional stacking pattern-driven tunability of these compounds with regard to electronic and magnetic properties to the local symmetry, inhomogeneity (or lack of it) of structural parameters, and electronic structures.
title Tunable magnetism in Nitride MXenes:consequences of atomic layer stacking
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2405.17321