Near IR bandgap semiconductive 2D conjugated metal-organic framework with rhombic lattice and high mobility
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866916263364657152 |
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| author | Sporrer, Lukas Zhou, Guojun Wang, Mingchao Balos, Vasileios Revuelta, Sergio Jastrzembski, Kamil Loeffler, Markus Petkov, Petko Heine, Thomas Kuc, Angieszka Canovas, Enrique Huang, Zhehao Feng, Xinliang Dong, Renhao |
| author_facet | Sporrer, Lukas Zhou, Guojun Wang, Mingchao Balos, Vasileios Revuelta, Sergio Jastrzembski, Kamil Loeffler, Markus Petkov, Petko Heine, Thomas Kuc, Angieszka Canovas, Enrique Huang, Zhehao Feng, Xinliang Dong, Renhao |
| contents | Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) are emerging as a unique class of 2D electronic materials. However, intrinsically semiconducting 2D c-MOFs with gaps in the Vis-NIR and high charge carrier mobility have been rare. Most of the reported semiconducting 2D c-MOFs are metallic (i.e. gapless), which limits their use in applications where larger band gaps are needed for logic devices. Herein, we design a new D2h-geometric ligand, 2,3,6,7,11,12,15,16-octahydroxyphenanthro(9,10b)triphenylene (OHPTP), and synthesize the first example of a 2D c-MOF single crystal (OHPTP-Cu) with a rhombohedral pore geometry after coordination with copper. The continuous rotation electron diffraction (cRED) analysis unveils the orthorhombic crystal structure at the atomic level with a unique AB layer stacking. The resultant Cu2(OHPTP) is a p-type semiconductor with an indirect band gap of about 0.50 eV and exhibits high electrical conductivity of 0.10 S cm-1 and high charge carrier mobility of 10.0 cm2V-1s-1. Density-functional theory calculations underline the predominant role of the out-of-plane charge transport in this semiquinone-based 2D c-MOFs. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_17899 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Near IR bandgap semiconductive 2D conjugated metal-organic framework with rhombic lattice and high mobility Sporrer, Lukas Zhou, Guojun Wang, Mingchao Balos, Vasileios Revuelta, Sergio Jastrzembski, Kamil Loeffler, Markus Petkov, Petko Heine, Thomas Kuc, Angieszka Canovas, Enrique Huang, Zhehao Feng, Xinliang Dong, Renhao Materials Science Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) are emerging as a unique class of 2D electronic materials. However, intrinsically semiconducting 2D c-MOFs with gaps in the Vis-NIR and high charge carrier mobility have been rare. Most of the reported semiconducting 2D c-MOFs are metallic (i.e. gapless), which limits their use in applications where larger band gaps are needed for logic devices. Herein, we design a new D2h-geometric ligand, 2,3,6,7,11,12,15,16-octahydroxyphenanthro(9,10b)triphenylene (OHPTP), and synthesize the first example of a 2D c-MOF single crystal (OHPTP-Cu) with a rhombohedral pore geometry after coordination with copper. The continuous rotation electron diffraction (cRED) analysis unveils the orthorhombic crystal structure at the atomic level with a unique AB layer stacking. The resultant Cu2(OHPTP) is a p-type semiconductor with an indirect band gap of about 0.50 eV and exhibits high electrical conductivity of 0.10 S cm-1 and high charge carrier mobility of 10.0 cm2V-1s-1. Density-functional theory calculations underline the predominant role of the out-of-plane charge transport in this semiquinone-based 2D c-MOFs. |
| title | Near IR bandgap semiconductive 2D conjugated metal-organic framework with rhombic lattice and high mobility |
| topic | Materials Science |
| url | https://arxiv.org/abs/2405.17899 |