Exchange Splitting Mechanism of Negative Magnetoresistance in Layered Antiferromagnetic Semimetals
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arXiv
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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866911891164495872 |
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| author | Grigoriev, P. D. Pavlov, N. S. Nekrasov, I. A. Shein, I. R. Sadakov, A. V. Sobolevskiy, O. A. Maltsev, E. Perez, N. Veyrat, L. Pudalov, V. M. |
| author_facet | Grigoriev, P. D. Pavlov, N. S. Nekrasov, I. A. Shein, I. R. Sadakov, A. V. Sobolevskiy, O. A. Maltsev, E. Perez, N. Veyrat, L. Pudalov, V. M. |
| contents | Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect is reported in several experimental studies with EuFe$_2$As$_2$, EuSn$_2$As$_2$, EuSn$_2$P$_2$, etc., where the resistance decreases quadratically with field by about $δρ/ρ\sim 4-6\%$ up to the spin-polarization field. Despite the fact that this effect is well documented experimentally, its theoretical explanation is missing up to date. In this paper we propose a novel theoretical mechanism describing the observed magnetoresistance that does not imply either topological origin of the materials, surface roughness, their potential defect structure, or electron-magnon scattering. We believe, the proposed intrinsic mechanism of magnetoresistance is applicable to a wide class of the layered AFM- ordered semimetals. The theoretically calculated magnetoresistance is qualitatively consistent with experimental data for crystals of various composition. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_18046 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Exchange Splitting Mechanism of Negative Magnetoresistance in Layered Antiferromagnetic Semimetals Grigoriev, P. D. Pavlov, N. S. Nekrasov, I. A. Shein, I. R. Sadakov, A. V. Sobolevskiy, O. A. Maltsev, E. Perez, N. Veyrat, L. Pudalov, V. M. Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect is reported in several experimental studies with EuFe$_2$As$_2$, EuSn$_2$As$_2$, EuSn$_2$P$_2$, etc., where the resistance decreases quadratically with field by about $δρ/ρ\sim 4-6\%$ up to the spin-polarization field. Despite the fact that this effect is well documented experimentally, its theoretical explanation is missing up to date. In this paper we propose a novel theoretical mechanism describing the observed magnetoresistance that does not imply either topological origin of the materials, surface roughness, their potential defect structure, or electron-magnon scattering. We believe, the proposed intrinsic mechanism of magnetoresistance is applicable to a wide class of the layered AFM- ordered semimetals. The theoretically calculated magnetoresistance is qualitatively consistent with experimental data for crystals of various composition. |
| title | Exchange Splitting Mechanism of Negative Magnetoresistance in Layered Antiferromagnetic Semimetals |
| topic | Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2405.18046 |