Observation and manipulation of charge carrier distribution at the SiO$_2$/Si interface
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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866909212263579648 |
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| author | Martins, Maria M. Kumar, Piyush Bathen, Marianne E. Salman, Zaher Grossner, Ulrike Prokscha, Thomas |
| author_facet | Martins, Maria M. Kumar, Piyush Bathen, Marianne E. Salman, Zaher Grossner, Ulrike Prokscha, Thomas |
| contents | Using low-energy muons, we map the charge carrier concentration as a function of depth and electric field across the \SiOSi interface up to a depth of \SI{100}{\nano\meter} in Si-based MOS capacitors. The results show that the formation of the anisotropic bond-centered muonium \MuBCz state in Si serves as a direct measure of the local changes in electronic structures. Different band-bending conditions could be distinguished, and the extension of the depletion width was directly extracted using the localized stopping and probing depth of the muons. Furthermore, electron build-up on the Si side of the \SiOO/Si interface, caused by the mirror charge induced by the fixed positive charge in the oxide and the image force effect, was observed. Our work represents a significant extension of the application of the muon spin rotation technique ($μ$SR) and lays the foundation for further research on direct observation of charge carrier density manipulation at technologically important semiconductor device interfaces. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_18211 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Observation and manipulation of charge carrier distribution at the SiO$_2$/Si interface Martins, Maria M. Kumar, Piyush Bathen, Marianne E. Salman, Zaher Grossner, Ulrike Prokscha, Thomas Other Condensed Matter Applied Physics Using low-energy muons, we map the charge carrier concentration as a function of depth and electric field across the \SiOSi interface up to a depth of \SI{100}{\nano\meter} in Si-based MOS capacitors. The results show that the formation of the anisotropic bond-centered muonium \MuBCz state in Si serves as a direct measure of the local changes in electronic structures. Different band-bending conditions could be distinguished, and the extension of the depletion width was directly extracted using the localized stopping and probing depth of the muons. Furthermore, electron build-up on the Si side of the \SiOO/Si interface, caused by the mirror charge induced by the fixed positive charge in the oxide and the image force effect, was observed. Our work represents a significant extension of the application of the muon spin rotation technique ($μ$SR) and lays the foundation for further research on direct observation of charge carrier density manipulation at technologically important semiconductor device interfaces. |
| title | Observation and manipulation of charge carrier distribution at the SiO$_2$/Si interface |
| topic | Other Condensed Matter Applied Physics |
| url | https://arxiv.org/abs/2405.18211 |