Silicon-integrated scandium-doped aluminum nitride electro-optic modulator
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arXiv
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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866911893724069888 |
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| author | Xu, Tianqi Liu, Yushuai Pu, Yuanmao Yang, Yongxiang Zhong, Qize Zhao, Xingyan Qiu, Yang Dong, Yuan Wu, Tao Zheng, Shaonan Hu, Ting |
| author_facet | Xu, Tianqi Liu, Yushuai Pu, Yuanmao Yang, Yongxiang Zhong, Qize Zhao, Xingyan Qiu, Yang Dong, Yuan Wu, Tao Zheng, Shaonan Hu, Ting |
| contents | Scandium-doped aluminum nitride (AlScN) with an asymmetric hexagonal wurtzite structure exhibits enhanced second-order nonlinear and piezoelectric properties compared to aluminum nitride (AlN), while maintaining a relatively large bandgap. It provides a promising platform for photonic integration and facilitates the seamless integration of passive and active functional devices. Here, we present the design, fabrication, and characterization of AlScN EO micro-ring modulators, introducing active functionalities to the chip-scale AlScN platform. These waveguide-integrated EO modulators employ sputtered AlScN thin films as the light-guiding medium, and the entire fabrication process is compatible with complementary metal oxide semiconductor (CMOS) technology. We characterize the high-frequency performance of an AlScN modulator for the first time, extracting a maximum in-device effective EO coefficient of 2.86 pm/V at 12 GHz. The devices show a minimum half-wave voltage-length product of 3.12 V*cm and a 3-dB modulation bandwidth of approximately 22 GHz. Our work provides a promising modulation scheme for cost-effective silicon-integrated photonics systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_18717 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Silicon-integrated scandium-doped aluminum nitride electro-optic modulator Xu, Tianqi Liu, Yushuai Pu, Yuanmao Yang, Yongxiang Zhong, Qize Zhao, Xingyan Qiu, Yang Dong, Yuan Wu, Tao Zheng, Shaonan Hu, Ting Applied Physics Optics Scandium-doped aluminum nitride (AlScN) with an asymmetric hexagonal wurtzite structure exhibits enhanced second-order nonlinear and piezoelectric properties compared to aluminum nitride (AlN), while maintaining a relatively large bandgap. It provides a promising platform for photonic integration and facilitates the seamless integration of passive and active functional devices. Here, we present the design, fabrication, and characterization of AlScN EO micro-ring modulators, introducing active functionalities to the chip-scale AlScN platform. These waveguide-integrated EO modulators employ sputtered AlScN thin films as the light-guiding medium, and the entire fabrication process is compatible with complementary metal oxide semiconductor (CMOS) technology. We characterize the high-frequency performance of an AlScN modulator for the first time, extracting a maximum in-device effective EO coefficient of 2.86 pm/V at 12 GHz. The devices show a minimum half-wave voltage-length product of 3.12 V*cm and a 3-dB modulation bandwidth of approximately 22 GHz. Our work provides a promising modulation scheme for cost-effective silicon-integrated photonics systems. |
| title | Silicon-integrated scandium-doped aluminum nitride electro-optic modulator |
| topic | Applied Physics Optics |
| url | https://arxiv.org/abs/2405.18717 |