Development of the X-ray polarimeter using CMOS imager: polarization sensitivity of a $1.5~{\rm μm}$ pixel CMOS sensor

Fuente: arXiv
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Autores principales: Iwata, Toshiya, Hagino, Kouichi, Odaka, Hirokazu, Tamba, Tsubasa, Ichihashi, Masahiro, Kato, Tatsuaki, Ishiwata, Kota, Kuramoto, Haruki, Matsuhashi, Hiroumi, Arai, Shota, Minami, Takahiro, Takashima, Satoshi, Bamba, Aya
Formato: Preprint
Publicado: 2024
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author Iwata, Toshiya
Hagino, Kouichi
Odaka, Hirokazu
Tamba, Tsubasa
Ichihashi, Masahiro
Kato, Tatsuaki
Ishiwata, Kota
Kuramoto, Haruki
Matsuhashi, Hiroumi
Arai, Shota
Minami, Takahiro
Takashima, Satoshi
Bamba, Aya
author_facet Iwata, Toshiya
Hagino, Kouichi
Odaka, Hirokazu
Tamba, Tsubasa
Ichihashi, Masahiro
Kato, Tatsuaki
Ishiwata, Kota
Kuramoto, Haruki
Matsuhashi, Hiroumi
Arai, Shota
Minami, Takahiro
Takashima, Satoshi
Bamba, Aya
contents We are developing an imaging polarimeter by combining a fine-pixel CMOS image sensor with a coded aperture mask as part of the cipher project, aiming to achieve X-ray polarimetry in the energy range of $10$$\unicode{x2013}$$30~\mathrm{keV}$. A successful proof-of-concept experiment was conducted using a fine-pixel CMOS sensor with a $2.5~\mathrm{μm}$ pixel size. In this study, we conducted beam experiments to assess the modulation factor (MF) of the CMOS sensor with a $1.5~\mathrm{μm}$ pixel size manufactured by Canon and to determine if there was any improvement in the MF. The measured MF was $8.32\% \pm 0.34\%$ at $10~\mathrm{keV}$ and $16.10\% \pm 0.68\%$ at $22~\mathrm{keV}$, exceeding those of the $2.5~\mathrm{μm}$ sensor in the $6$$\unicode{x2013}$$22~\mathrm{keV}$ range. We also evaluated the quantum efficiency of the sensor, inferring a detection layer thickness of $2.67 \pm 0.48~{\rm μm}$. To develop a more sensitive polarimeter, a sensor with a thicker detection layer, smaller pixel size, and reduced thermal diffusion effect is desirable.
format Preprint
id arxiv_https___arxiv_org_abs_2405_18907
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Development of the X-ray polarimeter using CMOS imager: polarization sensitivity of a $1.5~{\rm μm}$ pixel CMOS sensor
Iwata, Toshiya
Hagino, Kouichi
Odaka, Hirokazu
Tamba, Tsubasa
Ichihashi, Masahiro
Kato, Tatsuaki
Ishiwata, Kota
Kuramoto, Haruki
Matsuhashi, Hiroumi
Arai, Shota
Minami, Takahiro
Takashima, Satoshi
Bamba, Aya
Instrumentation and Methods for Astrophysics
We are developing an imaging polarimeter by combining a fine-pixel CMOS image sensor with a coded aperture mask as part of the cipher project, aiming to achieve X-ray polarimetry in the energy range of $10$$\unicode{x2013}$$30~\mathrm{keV}$. A successful proof-of-concept experiment was conducted using a fine-pixel CMOS sensor with a $2.5~\mathrm{μm}$ pixel size. In this study, we conducted beam experiments to assess the modulation factor (MF) of the CMOS sensor with a $1.5~\mathrm{μm}$ pixel size manufactured by Canon and to determine if there was any improvement in the MF. The measured MF was $8.32\% \pm 0.34\%$ at $10~\mathrm{keV}$ and $16.10\% \pm 0.68\%$ at $22~\mathrm{keV}$, exceeding those of the $2.5~\mathrm{μm}$ sensor in the $6$$\unicode{x2013}$$22~\mathrm{keV}$ range. We also evaluated the quantum efficiency of the sensor, inferring a detection layer thickness of $2.67 \pm 0.48~{\rm μm}$. To develop a more sensitive polarimeter, a sensor with a thicker detection layer, smaller pixel size, and reduced thermal diffusion effect is desirable.
title Development of the X-ray polarimeter using CMOS imager: polarization sensitivity of a $1.5~{\rm μm}$ pixel CMOS sensor
topic Instrumentation and Methods for Astrophysics
url https://arxiv.org/abs/2405.18907