Barrier height inhomogeneity and origin of 1/f-noise in topological insulator-based photo-detector
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| Format: | Preprint |
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2024
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| _version_ | 1866911627258888192 |
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| author | Kalimuddin, Sk Das, Biswajit Chatterjee, Sudipta Bera, Arnab Bera, Satyabrata Chattopadhyay, Kalyan Kumar Mondal, Mintu |
| author_facet | Kalimuddin, Sk Das, Biswajit Chatterjee, Sudipta Bera, Arnab Bera, Satyabrata Chattopadhyay, Kalyan Kumar Mondal, Mintu |
| contents | Topological insulators (TIs) with symmetry-protected surface states, offer exciting opportunities for next-generation photonic and optoelectronic device applications. The heterojunctions of TIs and semiconductors (e.g. Si, Ge) have been observed to excellent photo-responsive characteristics. However, the realization of high-frequency operations in these heterojunctions can be hindered by unwanted 1/f (or Flicker) noise and phase noise. Therefore, an in-depth understanding of 1/f noise figures becomes paramount for the effective utilization of such materials.Here we report optoelectronic response and 1/f noise characteristics of a p-n diode fabricated using topological insulator, Bi2Se3 and silicon for potential photo-detector. Through meticulous temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements, we ascertain crucial parameters like barrier height, ideality factor, and reverse saturation current of the photodetector. The low-frequency 1/f conductance noise spectra suggest a significant presence of trap states influencing the optoelectronic transport properties. The forward noise characteristics exhibit typical 1/f features, having a uni-slope across four decades of frequency, suggesting a homogeneous distribution of barrier height. The spectral and photocurrent-dependent responses show the power law behavior of noise level on photon flux. The hybrid heterojunction demonstrates excellent photo-response and reasonably low noise level, promising signatures for the room-temperature visible photodetector applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2405_19110 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Barrier height inhomogeneity and origin of 1/f-noise in topological insulator-based photo-detector Kalimuddin, Sk Das, Biswajit Chatterjee, Sudipta Bera, Arnab Bera, Satyabrata Chattopadhyay, Kalyan Kumar Mondal, Mintu Strongly Correlated Electrons Mesoscale and Nanoscale Physics Materials Science Topological insulators (TIs) with symmetry-protected surface states, offer exciting opportunities for next-generation photonic and optoelectronic device applications. The heterojunctions of TIs and semiconductors (e.g. Si, Ge) have been observed to excellent photo-responsive characteristics. However, the realization of high-frequency operations in these heterojunctions can be hindered by unwanted 1/f (or Flicker) noise and phase noise. Therefore, an in-depth understanding of 1/f noise figures becomes paramount for the effective utilization of such materials.Here we report optoelectronic response and 1/f noise characteristics of a p-n diode fabricated using topological insulator, Bi2Se3 and silicon for potential photo-detector. Through meticulous temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements, we ascertain crucial parameters like barrier height, ideality factor, and reverse saturation current of the photodetector. The low-frequency 1/f conductance noise spectra suggest a significant presence of trap states influencing the optoelectronic transport properties. The forward noise characteristics exhibit typical 1/f features, having a uni-slope across four decades of frequency, suggesting a homogeneous distribution of barrier height. The spectral and photocurrent-dependent responses show the power law behavior of noise level on photon flux. The hybrid heterojunction demonstrates excellent photo-response and reasonably low noise level, promising signatures for the room-temperature visible photodetector applications. |
| title | Barrier height inhomogeneity and origin of 1/f-noise in topological insulator-based photo-detector |
| topic | Strongly Correlated Electrons Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2405.19110 |