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Voltage-insensitive stochastic magnetic tunnel junctions with double free layers

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Ota, Rikuto, Kobayashi, Keito, Hayakawa, Keisuke, Kanai, Shun, Çamsarı, Kerem Y., Ohno, Hideo, Fukami, Shunsuke
Formato:	Preprint
Publicado:	2024
Materias:	Mesoscale and Nanoscale Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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