Pinpointing Lattice-Matched Conditions for Wurtzite ScxAl1-xN/GaN Heterostructures with X-Ray Reciprocal Space Analysis
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866910469741084672 |
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| author | Kumar, Rajendra Gopakumar, Govardan Abdin, Zain Ul Manfra, Michael J. Malis, Oana |
| author_facet | Kumar, Rajendra Gopakumar, Govardan Abdin, Zain Ul Manfra, Michael J. Malis, Oana |
| contents | Using comprehensive x-ray reciprocal space mapping, we establish the precise lattice-matching composition for wurtzite $Sc_xAl_{1-x}N$ layers on (0001) GaN to be x = 0.14+/-0.01. 100-nm thick $Sc_xAl_{1-x}N$ films (x = 0.09 - 0.19) were grown in small composition increments on c-plane GaN templates by plasma-assisted molecular beam epitaxy. The alloy composition was estimated from the fit of the (0002) x-ray peak positions assuming the c-lattice parameter of ScAlN films coherently-strained on GaN increases linearly with Sc-content determined independently by Rutherford Backscattering Spectrometry. Reciprocal space maps obtained from high-resolution x-ray diffraction measurements of the (10-15) reflection reveal that $Sc_xAl_{1-x}N$ films with x = 0.14+/-0.01 are coherently strained with the GaN substrate while the other compositions show evidence of relaxation. The in-plane lattice-matching with GaN is further confirmed for a 300-nm thick $Sc_{0.14}Al_{0.86}N$ layer. The full-width-at-half-maximum of the (0002) reflection rocking curve for this $Sc_{0.14}Al_{0.86}N$ film is 106 arcseconds and corresponds to the lowest value reported in the literature for wurtzite ScAlN films. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_01540 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Pinpointing Lattice-Matched Conditions for Wurtzite ScxAl1-xN/GaN Heterostructures with X-Ray Reciprocal Space Analysis Kumar, Rajendra Gopakumar, Govardan Abdin, Zain Ul Manfra, Michael J. Malis, Oana Materials Science Using comprehensive x-ray reciprocal space mapping, we establish the precise lattice-matching composition for wurtzite $Sc_xAl_{1-x}N$ layers on (0001) GaN to be x = 0.14+/-0.01. 100-nm thick $Sc_xAl_{1-x}N$ films (x = 0.09 - 0.19) were grown in small composition increments on c-plane GaN templates by plasma-assisted molecular beam epitaxy. The alloy composition was estimated from the fit of the (0002) x-ray peak positions assuming the c-lattice parameter of ScAlN films coherently-strained on GaN increases linearly with Sc-content determined independently by Rutherford Backscattering Spectrometry. Reciprocal space maps obtained from high-resolution x-ray diffraction measurements of the (10-15) reflection reveal that $Sc_xAl_{1-x}N$ films with x = 0.14+/-0.01 are coherently strained with the GaN substrate while the other compositions show evidence of relaxation. The in-plane lattice-matching with GaN is further confirmed for a 300-nm thick $Sc_{0.14}Al_{0.86}N$ layer. The full-width-at-half-maximum of the (0002) reflection rocking curve for this $Sc_{0.14}Al_{0.86}N$ film is 106 arcseconds and corresponds to the lowest value reported in the literature for wurtzite ScAlN films. |
| title | Pinpointing Lattice-Matched Conditions for Wurtzite ScxAl1-xN/GaN Heterostructures with X-Ray Reciprocal Space Analysis |
| topic | Materials Science |
| url | https://arxiv.org/abs/2406.01540 |