Isolation of individual Er quantum emitters in anatase TiO$_2$ on Si photonics

Fuente: arXiv
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Autores principales: Ji, Cheng, Pettit, Robert M., Gupta, Shobhit, Grant, Gregory D., Masiulionis, Ignas, Sundaresh, Ananthesh, Deckoff--Jones, Skylar, Olberding, Max, Singh, Manish K., Heremans, F. Joseph, Guha, Supratik, Dibos, Alan M., Sullivan, Sean E.
Formato: Preprint
Publicado: 2024
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author Ji, Cheng
Pettit, Robert M.
Gupta, Shobhit
Grant, Gregory D.
Masiulionis, Ignas
Sundaresh, Ananthesh
Deckoff--Jones, Skylar
Olberding, Max
Singh, Manish K.
Heremans, F. Joseph
Guha, Supratik
Dibos, Alan M.
Sullivan, Sean E.
author_facet Ji, Cheng
Pettit, Robert M.
Gupta, Shobhit
Grant, Gregory D.
Masiulionis, Ignas
Sundaresh, Ananthesh
Deckoff--Jones, Skylar
Olberding, Max
Singh, Manish K.
Heremans, F. Joseph
Guha, Supratik
Dibos, Alan M.
Sullivan, Sean E.
contents Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er$^{3+}$) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for a quantum internet, it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. In this work, we demonstrate the optical isolation of single Er$^{3+}$ ions in CMOS-compatible titanium dioxide (TiO$_2$) thin films monolithically integrated on a silicon-on-insulator (SOI) photonics platform. Our results demonstrate a first step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er$^{3+}$ doped thin films.
format Preprint
id arxiv_https___arxiv_org_abs_2406_02810
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Isolation of individual Er quantum emitters in anatase TiO$_2$ on Si photonics
Ji, Cheng
Pettit, Robert M.
Gupta, Shobhit
Grant, Gregory D.
Masiulionis, Ignas
Sundaresh, Ananthesh
Deckoff--Jones, Skylar
Olberding, Max
Singh, Manish K.
Heremans, F. Joseph
Guha, Supratik
Dibos, Alan M.
Sullivan, Sean E.
Quantum Physics
Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er$^{3+}$) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for a quantum internet, it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. In this work, we demonstrate the optical isolation of single Er$^{3+}$ ions in CMOS-compatible titanium dioxide (TiO$_2$) thin films monolithically integrated on a silicon-on-insulator (SOI) photonics platform. Our results demonstrate a first step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er$^{3+}$ doped thin films.
title Isolation of individual Er quantum emitters in anatase TiO$_2$ on Si photonics
topic Quantum Physics
url https://arxiv.org/abs/2406.02810