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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2406.02810 |
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Table of Contents:
- Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er$^{3+}$) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for a quantum internet, it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. In this work, we demonstrate the optical isolation of single Er$^{3+}$ ions in CMOS-compatible titanium dioxide (TiO$_2$) thin films monolithically integrated on a silicon-on-insulator (SOI) photonics platform. Our results demonstrate a first step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er$^{3+}$ doped thin films.