Photon emission by hot electron injection across a lateral \textit{pn} junction
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arXiv
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| Auteurs principaux: | , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866929377101479936 |
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| author | Norimoto, S. Saxena, R. See, P. Nasir, A. Griffiths, J. P. Chen, C. Ritchie, D. A. Kataoka, M. |
| author_facet | Norimoto, S. Saxena, R. See, P. Nasir, A. Griffiths, J. P. Chen, C. Ritchie, D. A. Kataoka, M. |
| contents | We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is created several microns away from the hot electron emitter by inducing interfacial charges using a surface gate. The energy relaxation of the hot electrons is suppressed by separating the orbitals before and after longitudinal-optical (LO) phonon emission. This technique enables the hot electrons to reach the {\it p}-type region and to recombine with induced holes followed by photon emissions. Hot electron-induced hole recombination is confirmed by a peak around \qty{810}{nm} in an optical spectrum that corresponds to excitonic recombination in a \ce{GaAs} quantum well. An asymmetric structure observed in the optical spectrum as a function of the magnetic field originates from the chiral transport of the hot electrons in the Hall edge channel. We propose the combination of our technology and on-demand single-electron source would enable the development of an on-demand single photon source that is an essential building block to drive an optical quantum circuit and to transfer quantum information for a long distance. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_04556 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Photon emission by hot electron injection across a lateral \textit{pn} junction Norimoto, S. Saxena, R. See, P. Nasir, A. Griffiths, J. P. Chen, C. Ritchie, D. A. Kataoka, M. Mesoscale and Nanoscale Physics We demonstrate a method to generate photons by injecting hot electrons into a {\it pn} junction within a \ce{GaAs/AlGaAs} heterostructure. Hot electrons are generated by biasing across a mesoscopic potential in {\it n}-type region and travel toward {\it p}-type region through quantum Hall edge channel in the presence of magnetic field perpendicular to the substrate. The {\it p}-type region is created several microns away from the hot electron emitter by inducing interfacial charges using a surface gate. The energy relaxation of the hot electrons is suppressed by separating the orbitals before and after longitudinal-optical (LO) phonon emission. This technique enables the hot electrons to reach the {\it p}-type region and to recombine with induced holes followed by photon emissions. Hot electron-induced hole recombination is confirmed by a peak around \qty{810}{nm} in an optical spectrum that corresponds to excitonic recombination in a \ce{GaAs} quantum well. An asymmetric structure observed in the optical spectrum as a function of the magnetic field originates from the chiral transport of the hot electrons in the Hall edge channel. We propose the combination of our technology and on-demand single-electron source would enable the development of an on-demand single photon source that is an essential building block to drive an optical quantum circuit and to transfer quantum information for a long distance. |
| title | Photon emission by hot electron injection across a lateral \textit{pn} junction |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2406.04556 |