Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Fuente: arXiv
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Autori principali: Jaworski, Maciej, Mrowiński, Paweł, Burakowski, Marek, Holewa, Paweł, Zeidler, Laura, Syperek, Marcin, Semenova, Elizaveta, Sęk, Grzegorz
Natura: Preprint
Pubblicazione: 2024
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author Jaworski, Maciej
Mrowiński, Paweł
Burakowski, Marek
Holewa, Paweł
Zeidler, Laura
Syperek, Marcin
Semenova, Elizaveta
Sęk, Grzegorz
author_facet Jaworski, Maciej
Mrowiński, Paweł
Burakowski, Marek
Holewa, Paweł
Zeidler, Laura
Syperek, Marcin
Semenova, Elizaveta
Sęk, Grzegorz
contents Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique lacks direct 3D control over the nanostructure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon leakage while directing photons into the collecting lens aperture. Here, we present an alternative approach to employ Xenon plasma-focused ion beam (Xe-PFIB) technology as a reliable method for the 3D shaping of photonic nanostructures containing low-density self-assembled InAs/InP quantum dots emitting in the C-band range of the 3rd telecommunication window. We explore both deterministic and non-deterministic fabrication approaches, resulting in mesas naturally shaped as truncated cones. As a demonstration, we fabricate mesas using a heterogeneously integrated structure with a QDs membrane atop an aluminum mirror and silicon substrate. Finite-difference time-domain (FDTD) simulations show that the angled sidewalls significantly increase photon extraction efficiency, achieving η = 0.89 for NA = 0.65. We demonstrate experimentally a high purity of pulsed single-photon emission (~99%) and a high extraction efficiency of η = 0.24, with the latter surpassing the highest reported values obtained using electron beam lithography in the C-band.
format Preprint
id arxiv_https___arxiv_org_abs_2406_04682
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
Jaworski, Maciej
Mrowiński, Paweł
Burakowski, Marek
Holewa, Paweł
Zeidler, Laura
Syperek, Marcin
Semenova, Elizaveta
Sęk, Grzegorz
Optics
Mesoscale and Nanoscale Physics
Electron beam lithography is a standard method for fabricating photonic nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient single and indistinguishable photon sources in quantum information processing. However, this technique lacks direct 3D control over the nanostructure shape, complicating the design and enlarging the 2D footprint to suppress in-plane photon leakage while directing photons into the collecting lens aperture. Here, we present an alternative approach to employ Xenon plasma-focused ion beam (Xe-PFIB) technology as a reliable method for the 3D shaping of photonic nanostructures containing low-density self-assembled InAs/InP quantum dots emitting in the C-band range of the 3rd telecommunication window. We explore both deterministic and non-deterministic fabrication approaches, resulting in mesas naturally shaped as truncated cones. As a demonstration, we fabricate mesas using a heterogeneously integrated structure with a QDs membrane atop an aluminum mirror and silicon substrate. Finite-difference time-domain (FDTD) simulations show that the angled sidewalls significantly increase photon extraction efficiency, achieving η = 0.89 for NA = 0.65. We demonstrate experimentally a high purity of pulsed single-photon emission (~99%) and a high extraction efficiency of η = 0.24, with the latter surpassing the highest reported values obtained using electron beam lithography in the C-band.
title Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
topic Optics
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2406.04682