Resilient Growth of Highly Crystalline Topological Insulator-Superconductor Heterostructure Enabled by Ex-situ Nitride Film
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arXiv
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| Autori principali: | , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866929408762183680 |
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| author | Xie, Renjie Ge, Min Xiao, Shaozhu Zhang, Jiahui Bi, Jiachang Yuan, Xiaoyu Yi, Hee Taek Wang, Baomin Oh, Seongshik Cao, Yanwei Yao, Xiong |
| author_facet | Xie, Renjie Ge, Min Xiao, Shaozhu Zhang, Jiahui Bi, Jiachang Yuan, Xiaoyu Yi, Hee Taek Wang, Baomin Oh, Seongshik Cao, Yanwei Yao, Xiong |
| contents | Highly crystalline and easily feasible topological insulator-superconductor (TI-SC) heterostructures are crucial for the development of practical topological qubit devices. The optimal superconducting layer for TI-SC heterostructures should be highly resilient against external contaminations and structurally compatible with TIs. In this study, we provide a solution to this challenge by showcasing the growth of a highly crystalline TI-SC heterostructure using refractory TiN (111) as the superconducting layer. This approach can eliminate the need for in-situ cleaving or growth. More importantly, the TiN surface shows high resilience against contaminations during air exposure, as demonstrated by the successful recyclable growth of Bi2Se3. Our findings indicate that TI-SC heterostructures based on nitride films are compatible with device fabrication techniques, paving a path to the realization of practical topological qubit devices in the future. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_06112 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Resilient Growth of Highly Crystalline Topological Insulator-Superconductor Heterostructure Enabled by Ex-situ Nitride Film Xie, Renjie Ge, Min Xiao, Shaozhu Zhang, Jiahui Bi, Jiachang Yuan, Xiaoyu Yi, Hee Taek Wang, Baomin Oh, Seongshik Cao, Yanwei Yao, Xiong Mesoscale and Nanoscale Physics Superconductivity Highly crystalline and easily feasible topological insulator-superconductor (TI-SC) heterostructures are crucial for the development of practical topological qubit devices. The optimal superconducting layer for TI-SC heterostructures should be highly resilient against external contaminations and structurally compatible with TIs. In this study, we provide a solution to this challenge by showcasing the growth of a highly crystalline TI-SC heterostructure using refractory TiN (111) as the superconducting layer. This approach can eliminate the need for in-situ cleaving or growth. More importantly, the TiN surface shows high resilience against contaminations during air exposure, as demonstrated by the successful recyclable growth of Bi2Se3. Our findings indicate that TI-SC heterostructures based on nitride films are compatible with device fabrication techniques, paving a path to the realization of practical topological qubit devices in the future. |
| title | Resilient Growth of Highly Crystalline Topological Insulator-Superconductor Heterostructure Enabled by Ex-situ Nitride Film |
| topic | Mesoscale and Nanoscale Physics Superconductivity |
| url | https://arxiv.org/abs/2406.06112 |