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Main Authors: Chen, Xiao, Shu, Xiaoxuan, Zhou, Jiangcheng, Wan, Lei, Xiao, Peng, Fu, Yuchen, Ye, Junzhi, Huang, Yi-Teng, Yan, Bin, Xue, Dingjiang, Chen, Tao, Chen, Jiejie, Hoye, Robert L. Z., Zhou, Ru
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2406.06807
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author Chen, Xiao
Shu, Xiaoxuan
Zhou, Jiangcheng
Wan, Lei
Xiao, Peng
Fu, Yuchen
Ye, Junzhi
Huang, Yi-Teng
Yan, Bin
Xue, Dingjiang
Chen, Tao
Chen, Jiejie
Hoye, Robert L. Z.
Zhou, Ru
author_facet Chen, Xiao
Shu, Xiaoxuan
Zhou, Jiangcheng
Wan, Lei
Xiao, Peng
Fu, Yuchen
Ye, Junzhi
Huang, Yi-Teng
Yan, Bin
Xue, Dingjiang
Chen, Tao
Chen, Jiejie
Hoye, Robert L. Z.
Zhou, Ru
contents Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb$_2$S$_3$ is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb$_2$S$_3$ solar cells is limited by nonradiative recombination, closely associated with the poor-quality absorber films. Additive engineering is an effective strategy to improved the properties of solution-processed films. This work shows that the addition of monoethanolamine (MEA) into the precursor solution allows the nucleation and growth of Sb$_2$S$_3$ films to be controlled, enabling the deposition of high-quality Sb$_2$S$_3$ absorbers with reduced grain boundary density, optimized band positions and increased carrier concentration. Complemented with computations, it is revealed that the incorporation of MEA leads to a more efficient and energetically favorable deposition for enhanced heterogeneous nucleation on the substrate, which increases the grain size and accelerates the deposition rate of Sb$_2$S$_3$ films. Due to suppressed carrier recombination and improved charge-carrier transport in Sb$_2$S$_3$ absorber films, the MEA-modulated Sb$_2$S$_3$ solar cell yields a power conversion efficiency (PCE) of 7.22% under AM1.5G illumination, and an IPV PCE of 17.55% under 1000 lux white light emitting diode (WLED) illumination, which is the highest yet reported for Sb$_2$S$_3$ IPVs. Furthermore, we construct high performance large-area Sb$_2$S$_3$ IPV modules to power IoT wireless sensors, and realize the long-term continuous recording of environmental parameters under WLED illumination in an office. This work highlights the great prospect of Sb$_2$S$_3$ photovoltaics for indoor energy harvesting.
format Preprint
id arxiv_https___arxiv_org_abs_2406_06807
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Additive engineering for Sb$_2$S$_3$ indoor photovoltaics with efficiency exceeding 17%
Chen, Xiao
Shu, Xiaoxuan
Zhou, Jiangcheng
Wan, Lei
Xiao, Peng
Fu, Yuchen
Ye, Junzhi
Huang, Yi-Teng
Yan, Bin
Xue, Dingjiang
Chen, Tao
Chen, Jiejie
Hoye, Robert L. Z.
Zhou, Ru
Materials Science
Indoor photovoltaics (IPVs) have attracted increasing attention for sustainably powering Internet of Things (IoT) electronics. Sb$_2$S$_3$ is a promising IPV candidate material with a bandgap of ~1.75 eV, which is near the optimal value for indoor energy harvesting. However, the performance of Sb$_2$S$_3$ solar cells is limited by nonradiative recombination, closely associated with the poor-quality absorber films. Additive engineering is an effective strategy to improved the properties of solution-processed films. This work shows that the addition of monoethanolamine (MEA) into the precursor solution allows the nucleation and growth of Sb$_2$S$_3$ films to be controlled, enabling the deposition of high-quality Sb$_2$S$_3$ absorbers with reduced grain boundary density, optimized band positions and increased carrier concentration. Complemented with computations, it is revealed that the incorporation of MEA leads to a more efficient and energetically favorable deposition for enhanced heterogeneous nucleation on the substrate, which increases the grain size and accelerates the deposition rate of Sb$_2$S$_3$ films. Due to suppressed carrier recombination and improved charge-carrier transport in Sb$_2$S$_3$ absorber films, the MEA-modulated Sb$_2$S$_3$ solar cell yields a power conversion efficiency (PCE) of 7.22% under AM1.5G illumination, and an IPV PCE of 17.55% under 1000 lux white light emitting diode (WLED) illumination, which is the highest yet reported for Sb$_2$S$_3$ IPVs. Furthermore, we construct high performance large-area Sb$_2$S$_3$ IPV modules to power IoT wireless sensors, and realize the long-term continuous recording of environmental parameters under WLED illumination in an office. This work highlights the great prospect of Sb$_2$S$_3$ photovoltaics for indoor energy harvesting.
title Additive engineering for Sb$_2$S$_3$ indoor photovoltaics with efficiency exceeding 17%
topic Materials Science
url https://arxiv.org/abs/2406.06807