High-fidelity single-spin shuttling in silicon

Fuente: arXiv
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Main Authors: De Smet, Maxim, Matsumoto, Yuta, Zwerver, Anne-Marije J., Tryputen, Larysa, de Snoo, Sander L., Amitonov, Sergey V., Katiraee-Far, S. R., Sammak, Amir, Samkharadze, Nodar, Gül, Önder, Wasserman, Rick N. M., Greplová, E., Rimbach-Russ, Maximilian, Scappucci, Giordano, Vandersypen, Lieven M. K.
Format: Preprint
Published: 2024
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author De Smet, Maxim
Matsumoto, Yuta
Zwerver, Anne-Marije J.
Tryputen, Larysa
de Snoo, Sander L.
Amitonov, Sergey V.
Katiraee-Far, S. R.
Sammak, Amir
Samkharadze, Nodar
Gül, Önder
Wasserman, Rick N. M.
Greplová, E.
Rimbach-Russ, Maximilian
Scappucci, Giordano
Vandersypen, Lieven M. K.
author_facet De Smet, Maxim
Matsumoto, Yuta
Zwerver, Anne-Marije J.
Tryputen, Larysa
de Snoo, Sander L.
Amitonov, Sergey V.
Katiraee-Far, S. R.
Sammak, Amir
Samkharadze, Nodar
Gül, Önder
Wasserman, Rick N. M.
Greplová, E.
Rimbach-Russ, Maximilian
Scappucci, Giordano
Vandersypen, Lieven M. K.
contents The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms trapped with optical tweezers. For semiconductor spin qubits, several studies have investigated spin coherent shuttling of individual electrons, but high-fidelity transport over extended distances remains to be demonstrated. Here we report shuttling of an electron inside an isotopically purified Si/SiGe heterostructure using electric gate potentials. First, we form static quantum dots, and study how spin coherence decays as we repeatedly move a single electron between up to five dots. Next, we create a traveling wave potential to transport an electron in a moving quantum dot. This second method shows substantially better spin coherence than the first. It allows us to displace an electron over an effective distance of 10 $μ$m in under 200 ns with an average fidelity of 99.5%. These results will guide future efforts to realize large-scale semiconductor quantum processors, making use of electron shuttling both within and between qubit arrays.
format Preprint
id arxiv_https___arxiv_org_abs_2406_07267
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle High-fidelity single-spin shuttling in silicon
De Smet, Maxim
Matsumoto, Yuta
Zwerver, Anne-Marije J.
Tryputen, Larysa
de Snoo, Sander L.
Amitonov, Sergey V.
Katiraee-Far, S. R.
Sammak, Amir
Samkharadze, Nodar
Gül, Önder
Wasserman, Rick N. M.
Greplová, E.
Rimbach-Russ, Maximilian
Scappucci, Giordano
Vandersypen, Lieven M. K.
Mesoscale and Nanoscale Physics
Quantum Physics
The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms trapped with optical tweezers. For semiconductor spin qubits, several studies have investigated spin coherent shuttling of individual electrons, but high-fidelity transport over extended distances remains to be demonstrated. Here we report shuttling of an electron inside an isotopically purified Si/SiGe heterostructure using electric gate potentials. First, we form static quantum dots, and study how spin coherence decays as we repeatedly move a single electron between up to five dots. Next, we create a traveling wave potential to transport an electron in a moving quantum dot. This second method shows substantially better spin coherence than the first. It allows us to displace an electron over an effective distance of 10 $μ$m in under 200 ns with an average fidelity of 99.5%. These results will guide future efforts to realize large-scale semiconductor quantum processors, making use of electron shuttling both within and between qubit arrays.
title High-fidelity single-spin shuttling in silicon
topic Mesoscale and Nanoscale Physics
Quantum Physics
url https://arxiv.org/abs/2406.07267