Charge ordered phases in the hole-doped triangular Mott insulator 4Hb-TaS2
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arXiv
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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866917696009928704 |
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| author | Bang, Junho Lee, Byeongin Yang, Hyungryul Kim, Sunghun Wulferding, Dirk Cho, Doohee |
| author_facet | Bang, Junho Lee, Byeongin Yang, Hyungryul Kim, Sunghun Wulferding, Dirk Cho, Doohee |
| contents | 4Hb-TaS2 has been proposed to possess unconventional superconductivity with broken time reveral symmetry due to distinctive layered structure, featuring a heterojunction between a 2D triangular Mott insulator and a charge density wave metal. However, since a frustrated spin state in the correlated insulating layer is susceptible to charge ordering with carrier doping, it is required to investigate the charge distribution driven by inter-layer charge transfer to understand its superconductivity. Here, we use scanning tunneling microscopy and spectroscopy (STM/S) to investigate the charge ordered phases of 1T-TaS2 layers within 4Hb-TaS2, explicitly focusing on the non-half-filled regime. Our STS results show an energy gap which exhibits an out-of-phase relation with the charge density. We ascribe the competition between on-site and nonlocal Coulomb repulsion as the driving force for the charge-ordered insulating phase of a doped triangular Mott insulator. In addition, we discuss the role of the insulating layer in the enhanced superconductivity of 4Hb-TaS2. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_07960 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Charge ordered phases in the hole-doped triangular Mott insulator 4Hb-TaS2 Bang, Junho Lee, Byeongin Yang, Hyungryul Kim, Sunghun Wulferding, Dirk Cho, Doohee Strongly Correlated Electrons 4Hb-TaS2 has been proposed to possess unconventional superconductivity with broken time reveral symmetry due to distinctive layered structure, featuring a heterojunction between a 2D triangular Mott insulator and a charge density wave metal. However, since a frustrated spin state in the correlated insulating layer is susceptible to charge ordering with carrier doping, it is required to investigate the charge distribution driven by inter-layer charge transfer to understand its superconductivity. Here, we use scanning tunneling microscopy and spectroscopy (STM/S) to investigate the charge ordered phases of 1T-TaS2 layers within 4Hb-TaS2, explicitly focusing on the non-half-filled regime. Our STS results show an energy gap which exhibits an out-of-phase relation with the charge density. We ascribe the competition between on-site and nonlocal Coulomb repulsion as the driving force for the charge-ordered insulating phase of a doped triangular Mott insulator. In addition, we discuss the role of the insulating layer in the enhanced superconductivity of 4Hb-TaS2. |
| title | Charge ordered phases in the hole-doped triangular Mott insulator 4Hb-TaS2 |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2406.07960 |