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| Main Authors: | , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2406.08768 |
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Table of Contents:
- Efficient electric manipulation of valley degrees of freedom is critical and challenging for the advancement of valley-based information science and technology. We put forth an electrical scheme, based on a two-band Dirac model, that can switch the fully valley-polarized photocurrent between K and K' valleys using the circular bulk electro-photovoltaic effect. This is accomplished by applying an out-of-plane electric field to the two-dimensional valley materials, which enables continuous tuning of the Berry curvature and its sign flip. We found that the switch of the fully valley-polarized photocurrent is directly tied to the sign change of Berry curvature, which accompanies a topological phase transition, for instance, the quantum spin Hall effect and the quantum valley Hall effect. This scheme has been confirmed in monolayer BiAsI2 and germanene through first-principles calculations. Our paper offers a promising strategy for the development of a volatile valley-addressable memory device and could inspire further research in this area.