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| Autores principales: | , |
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| Formato: | Preprint |
| Publicado: |
2024
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2406.08999 |
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| _version_ | 1866909223224344576 |
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| author | Fang, D. Q. Wang, D. W. |
| author_facet | Fang, D. Q. Wang, D. W. |
| contents | Searching for controllable topological phase by means of external stimuli in two-dimensional (2D) material-based van der Waals (vdW) heterostructures is currently an active field for both the underlying physics and practical applications. Here, using first-principles calculations, we investigate electric-field-modulated topological phase transition in a vdW heterobilayer formed by vertically stacking 2D AlSb and InSe monolayers. The AlSb/InSe heterobilayer studied possesses both dynamical and thermal stabilities, which is a direct bandgap semiconductor and forms a Z-scheme heterojunction. With inclusion of spin-orbit coupling (SOC) and applying external electric field, the bandgap decreases at first and then increase, and a trivial insulator to topological insulator phase transition is observed. For the topological insulator phase, band inversion is ascribed to the strong SOC of p orbitals of Sb. Our work paves the way for the design and application of multifunctional nanoscale devices such as topological field effect transistor. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_08999 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electric-field-modulated topological phase transition in AlSb/InSe heterobilayers Fang, D. Q. Wang, D. W. Materials Science Computational Physics Searching for controllable topological phase by means of external stimuli in two-dimensional (2D) material-based van der Waals (vdW) heterostructures is currently an active field for both the underlying physics and practical applications. Here, using first-principles calculations, we investigate electric-field-modulated topological phase transition in a vdW heterobilayer formed by vertically stacking 2D AlSb and InSe monolayers. The AlSb/InSe heterobilayer studied possesses both dynamical and thermal stabilities, which is a direct bandgap semiconductor and forms a Z-scheme heterojunction. With inclusion of spin-orbit coupling (SOC) and applying external electric field, the bandgap decreases at first and then increase, and a trivial insulator to topological insulator phase transition is observed. For the topological insulator phase, band inversion is ascribed to the strong SOC of p orbitals of Sb. Our work paves the way for the design and application of multifunctional nanoscale devices such as topological field effect transistor. |
| title | Electric-field-modulated topological phase transition in AlSb/InSe heterobilayers |
| topic | Materials Science Computational Physics |
| url | https://arxiv.org/abs/2406.08999 |