Gatemonium: A Voltage-Tunable Fluxonium
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arXiv
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| Autores principales: | , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866914128471261184 |
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| author | Strickland, William M. Elfeky, Bassel Heiba Baker, Lukas Maiani, Andrea Lee, Jaewoo Levy, Ido Issokson, Jacob Vrajitoarea, Andrei Shabani, Javad |
| author_facet | Strickland, William M. Elfeky, Bassel Heiba Baker, Lukas Maiani, Andrea Lee, Jaewoo Levy, Ido Issokson, Jacob Vrajitoarea, Andrei Shabani, Javad |
| contents | We present a new style of fluxonium qubit, gatemonium, based on an all superconductorsemiconductor hybrid platform. The linear inductance is achieved using six hundred planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time domain characterization of the plasmon modes in a second gatemonium device with different charging energy and JJ array inductance. We discuss future directions for this platform in gate voltage-tunable, high plasma frequency, enhanced impedance junction arrays, and enhanced coherence times for voltage tunable architectures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_09002 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Gatemonium: A Voltage-Tunable Fluxonium Strickland, William M. Elfeky, Bassel Heiba Baker, Lukas Maiani, Andrea Lee, Jaewoo Levy, Ido Issokson, Jacob Vrajitoarea, Andrei Shabani, Javad Mesoscale and Nanoscale Physics We present a new style of fluxonium qubit, gatemonium, based on an all superconductorsemiconductor hybrid platform. The linear inductance is achieved using six hundred planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time domain characterization of the plasmon modes in a second gatemonium device with different charging energy and JJ array inductance. We discuss future directions for this platform in gate voltage-tunable, high plasma frequency, enhanced impedance junction arrays, and enhanced coherence times for voltage tunable architectures. |
| title | Gatemonium: A Voltage-Tunable Fluxonium |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2406.09002 |