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Bibliographische Detailangaben
Hauptverfasser: Strickland, William M., Elfeky, Bassel Heiba, Baker, Lukas, Maiani, Andrea, Lee, Jaewoo, Levy, Ido, Issokson, Jacob, Vrajitoarea, Andrei, Shabani, Javad
Format: Preprint
Veröffentlicht: 2024
Schlagworte:
Online-Zugang:https://arxiv.org/abs/2406.09002
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Inhaltsangabe:
  • We present a new style of fluxonium qubit, gatemonium, based on an all superconductorsemiconductor hybrid platform. The linear inductance is achieved using six hundred planar Al-InAs Josephson junctions (JJs) in series. By tuning the single junction with a gate voltage, we demonstrate electrostatic control of the effective Josephson energy, tuning the weight of the fictitious phase particle. One and two-tone spectroscopy of the gatemonium transitions further reveal details of the hybrid plasmon-fluxon spectrum. Accounting for the nonsinusoidal current-phase relation of the single junction, we fit the measured spectra to extract charging and inductive energies. We conduct time domain characterization of the plasmon modes in a second gatemonium device with different charging energy and JJ array inductance. We discuss future directions for this platform in gate voltage-tunable, high plasma frequency, enhanced impedance junction arrays, and enhanced coherence times for voltage tunable architectures.