Ultra-bright and energy-efficient quantum-dot LEDs by idealizing charge injection
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arXiv
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| Format: | Preprint |
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2024
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| author | Zheng, Yizhen Lin, Xing Li, Jiongzhao Chen, Jianan Song, Zixuan Gao, Yuan Wang, Huifeng Ye, Zikang Qin, Haiyan Peng, Xiaogang |
| author_facet | Zheng, Yizhen Lin, Xing Li, Jiongzhao Chen, Jianan Song, Zixuan Gao, Yuan Wang, Huifeng Ye, Zikang Qin, Haiyan Peng, Xiaogang |
| contents | Lighting and display, relying on electric and optical down-conversion emission with sluggish power efficiency, account for >15% global electricity consumption1,2. In 2014, quantum-dot (QD) LEDs (QLEDs) with near-optimal external quantum efficiency emerged3 and promised a pathway to avoid the vast down-conversion energy loss4,5. Despite a decade of progress4-22, fabrication of energy-efficient QLEDs with application-relevant brightness remains elusive. Here, the main roadblock is identified as the oxidative species adsorbed in the nanocrystalline electron-injection layer of QLEDs, which is then addressed by a simple reductive treatment to simultaneously boosts electron conductivity and hole blockage of the electron-injection layer. The resulting sub-bandgap-driven QLEDs with optimal efficiency achieve ultra-high brightness across the entire visible spectrum at least 2.6-fold higher than existing benchmarks. The brightness fully satisfies the demands of various forms of lighting and display, which surges to a remarkable level sufficient for QD laser diodes with a moderate bias (~9 V). Optimized electron injection further enables new types of QD-blend LEDs for diffuse white-light sources surpassing the 2035 R&D targets set by the U.S. Department of Energy. Our findings open a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_09730 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Ultra-bright and energy-efficient quantum-dot LEDs by idealizing charge injection Zheng, Yizhen Lin, Xing Li, Jiongzhao Chen, Jianan Song, Zixuan Gao, Yuan Wang, Huifeng Ye, Zikang Qin, Haiyan Peng, Xiaogang Applied Physics Materials Science Lighting and display, relying on electric and optical down-conversion emission with sluggish power efficiency, account for >15% global electricity consumption1,2. In 2014, quantum-dot (QD) LEDs (QLEDs) with near-optimal external quantum efficiency emerged3 and promised a pathway to avoid the vast down-conversion energy loss4,5. Despite a decade of progress4-22, fabrication of energy-efficient QLEDs with application-relevant brightness remains elusive. Here, the main roadblock is identified as the oxidative species adsorbed in the nanocrystalline electron-injection layer of QLEDs, which is then addressed by a simple reductive treatment to simultaneously boosts electron conductivity and hole blockage of the electron-injection layer. The resulting sub-bandgap-driven QLEDs with optimal efficiency achieve ultra-high brightness across the entire visible spectrum at least 2.6-fold higher than existing benchmarks. The brightness fully satisfies the demands of various forms of lighting and display, which surges to a remarkable level sufficient for QD laser diodes with a moderate bias (~9 V). Optimized electron injection further enables new types of QD-blend LEDs for diffuse white-light sources surpassing the 2035 R&D targets set by the U.S. Department of Energy. Our findings open a door for understanding and optimizing carrier transport in nanocrystalline semiconductors shared by various types of solution-processed optoelectronic devices. |
| title | Ultra-bright and energy-efficient quantum-dot LEDs by idealizing charge injection |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2406.09730 |