Optical sensing of charge and spin current fluctuations in centrosymmetric semiconductors
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arXiv
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| Hauptverfasser: | , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866909224597979136 |
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| author | Lakhal, Amin Virally, Stéphane Khurgin, Jacob B. Seletskiy, Denis V. |
| author_facet | Lakhal, Amin Virally, Stéphane Khurgin, Jacob B. Seletskiy, Denis V. |
| contents | We propose a time-resolved optical measurement scheme for sampling transient charge and spin currents in a bulk centrosymmetric semiconductor. The technique relies on emission of second harmonic light triggered by a pulsed below-gap optical excitation and a spontaneous intraband polarization arising from spin or charge motion, mediated by a $χ^(3)$-based nonlinear optical process. Our proposal uses homodyne amplification to boost the weak second harmonic signal, making it detectable with conventional electronics, calculated for charge current in a room temperature GaAs semiconductor. This all-optical technique requires neither electrical contact nor bias fields and the signal is estimated at a few percent relative to the shot noise of the probe. This proposal motivates a novel method for exploring thermal and quantum fluctuations in the solid state in a non-invasive manner. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_10397 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Optical sensing of charge and spin current fluctuations in centrosymmetric semiconductors Lakhal, Amin Virally, Stéphane Khurgin, Jacob B. Seletskiy, Denis V. Mesoscale and Nanoscale Physics Materials Science We propose a time-resolved optical measurement scheme for sampling transient charge and spin currents in a bulk centrosymmetric semiconductor. The technique relies on emission of second harmonic light triggered by a pulsed below-gap optical excitation and a spontaneous intraband polarization arising from spin or charge motion, mediated by a $χ^(3)$-based nonlinear optical process. Our proposal uses homodyne amplification to boost the weak second harmonic signal, making it detectable with conventional electronics, calculated for charge current in a room temperature GaAs semiconductor. This all-optical technique requires neither electrical contact nor bias fields and the signal is estimated at a few percent relative to the shot noise of the probe. This proposal motivates a novel method for exploring thermal and quantum fluctuations in the solid state in a non-invasive manner. |
| title | Optical sensing of charge and spin current fluctuations in centrosymmetric semiconductors |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2406.10397 |