Molybdenum low resistance thin film resistors for cryogenic devices
Fuente:
arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866929388041273344 |
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| author | Korneeva, Yu P Dryazgov, M A Porokhov, N V Osipov, N N Krasilnikov, M I Korneev, A A Tarkhov, M. A. |
| author_facet | Korneeva, Yu P Dryazgov, M A Porokhov, N V Osipov, N N Krasilnikov, M I Korneev, A A Tarkhov, M. A. |
| contents | We present a study of thin-film molybdenum resistors for NbN electronics operating at cryogenic temperatures. The key step is the 0.5-1.5 keV ion cleaning-activation of NbN before Mo deposition which allows to obtain a high-quality Mo/NbN interface which together with additional aluminum bandage layer in the area of contact pads allow to reduce contact resistance below 1 Ohm. The quality of the interfaces is confirmed by transmission electron microscopy and X-ray reflectometry. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2406_11329 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Molybdenum low resistance thin film resistors for cryogenic devices Korneeva, Yu P Dryazgov, M A Porokhov, N V Osipov, N N Krasilnikov, M I Korneev, A A Tarkhov, M. A. Superconductivity We present a study of thin-film molybdenum resistors for NbN electronics operating at cryogenic temperatures. The key step is the 0.5-1.5 keV ion cleaning-activation of NbN before Mo deposition which allows to obtain a high-quality Mo/NbN interface which together with additional aluminum bandage layer in the area of contact pads allow to reduce contact resistance below 1 Ohm. The quality of the interfaces is confirmed by transmission electron microscopy and X-ray reflectometry. |
| title | Molybdenum low resistance thin film resistors for cryogenic devices |
| topic | Superconductivity |
| url | https://arxiv.org/abs/2406.11329 |