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Autori principali: Lei, Chao, Mahon, Perry T., Canali, C. M., MacDonald, A. H.
Natura: Preprint
Pubblicazione: 2024
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Accesso online:https://arxiv.org/abs/2406.11591
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author Lei, Chao
Mahon, Perry T.
Canali, C. M.
MacDonald, A. H.
author_facet Lei, Chao
Mahon, Perry T.
Canali, C. M.
MacDonald, A. H.
contents The topological magnetoelectric effect (TME) is a defining property of three-dimensional $\mathbb{Z}_{2}$ topological insulators that was predicted on theoretical grounds more than a decade ago, but has still not been directly measured. In this Letter we propose a strategy for direct measurement of the TME and discuss the precision of the effect in real devices with charge and spin disorder.
format Preprint
id arxiv_https___arxiv_org_abs_2406_11591
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Capacitive scheme to detect the topological magnetoelectric effect
Lei, Chao
Mahon, Perry T.
Canali, C. M.
MacDonald, A. H.
Mesoscale and Nanoscale Physics
The topological magnetoelectric effect (TME) is a defining property of three-dimensional $\mathbb{Z}_{2}$ topological insulators that was predicted on theoretical grounds more than a decade ago, but has still not been directly measured. In this Letter we propose a strategy for direct measurement of the TME and discuss the precision of the effect in real devices with charge and spin disorder.
title Capacitive scheme to detect the topological magnetoelectric effect
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2406.11591