Observation of Temperature Independent Anomalous Hall Effect in Thin Bismuth from Near Absolute Zero to 300 K Temperature

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Yu, Oulin, Boivin, F., Silberztein, A., Gervais, G.
Format: Preprint
Published: 2024
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866914522160168960
author Yu, Oulin
Boivin, F.
Silberztein, A.
Gervais, G.
author_facet Yu, Oulin
Boivin, F.
Silberztein, A.
Gervais, G.
contents We report our discovery of a temperature independent anomalous Hall effect (AHE) from 15 mK to 300 K temperature occurring in a 68 nm thick transport device made out of pure bismuth. This surprising behaviour is accompanied with an expected temperature dependent longitudinal resistance consistent with semi-metallic bismuth, however it surprisingly showed no hint of a magnetoresistance for magnetic fields between $\pm30$ T. Even though bismuth is a diamagnetic material which {\it a priori} does not break time-reversal symmetry (TRS), our analysis of the reconstructed conductivities points towards the AHE to be of the intrinsic type, which does not emanate from magnetic impurities. Finally, as pure bismuth has been shown numerically to host a Berry curvature at its surface which breaks inversion symmetry, we propose it as a possible explanation for the temperature independent AHE observed here.
format Preprint
id arxiv_https___arxiv_org_abs_2406_12134
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Observation of Temperature Independent Anomalous Hall Effect in Thin Bismuth from Near Absolute Zero to 300 K Temperature
Yu, Oulin
Boivin, F.
Silberztein, A.
Gervais, G.
Mesoscale and Nanoscale Physics
We report our discovery of a temperature independent anomalous Hall effect (AHE) from 15 mK to 300 K temperature occurring in a 68 nm thick transport device made out of pure bismuth. This surprising behaviour is accompanied with an expected temperature dependent longitudinal resistance consistent with semi-metallic bismuth, however it surprisingly showed no hint of a magnetoresistance for magnetic fields between $\pm30$ T. Even though bismuth is a diamagnetic material which {\it a priori} does not break time-reversal symmetry (TRS), our analysis of the reconstructed conductivities points towards the AHE to be of the intrinsic type, which does not emanate from magnetic impurities. Finally, as pure bismuth has been shown numerically to host a Berry curvature at its surface which breaks inversion symmetry, we propose it as a possible explanation for the temperature independent AHE observed here.
title Observation of Temperature Independent Anomalous Hall Effect in Thin Bismuth from Near Absolute Zero to 300 K Temperature
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2406.12134